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Articles by keyword: «ZnSe»

• 3-D Mapping of Strain and Defects in a ZnSE Epilayer Using a Variable Energy Electron Beam
  Published in: II-VI Compounds and Semimagnetic Semiconductors (p163)
• A Simple Model for Describing the Nonlinear Transmission Dynamics of ZnS_xSe_1-x/ZnS_ySe_1-y(x>y) Waveguide Structures
  Published in: II-VI Compounds and Semimagnetic Semiconductors (p231)
• Absorption as Optical Access to Accepptor Concentrations and Compensation Mechanism in ZnSe Epilayers
  Published in: II-VI Compounds and Semimagnetic Semiconductors (p259)
• Analysis of Doping in ZnSe and ZnSSe by Far-Infrared Reflectance under Oblique Incidence
  Published in: II-VI Compounds and Semimagnetic Semiconductors (p73)
• Analytical Model for Calculating Exciton Energies as Measured in Zn_1-xCd_xSe/ZnSe and ZnSe/ZnS_xSe_1-x Quantum Wells
  Published in: II-VI Compounds and Semimagnetic Semiconductors (p191)
• Cathodoluminescence Study of the Y₀ Emission from ZnSe Films
  Published in: Beam Injection Assessment of Microstructures in Semiconductors (p89)
• Comparison of the Structural Properties of Epitaxial ZnSe Layers Grown on GaAs (001) by MOVPE Using Different Selenium Precursors
  Published in: II-VI Compounds and Semimagnetic Semiconductors (p159)
• Compensation Porcesses in MBE Grown ZnSe:N
  Published in: II-VI Compounds and Semimagnetic Semiconductors (p11)
• Contactless Characterization of Semiconductors Using Laser-Induced Surface Photo-Charge Voltage Measurements
  Published in: Semiconductor Processing and Characterization with Lasers (p221)
• Critical Thickness Determination of II-VI Semiconductors by Rheed and X-Ray Diffraction
  Published in: II-VI Compounds and Semimagnetic Semiconductors (p147)
• Defect Characterization of II-VI Compound Semiconductors Using Positron Lifetime Spectroscopy
  Published in: Defects in Semiconductors 19 (p1335)
• Degenerate-Four-Wave-Mixing at the Nitrogen Acceptor Bound Exiton in ZnSe Epilayers
  Published in: II-VI Compounds and Semimagnetic Semiconductors (p283)
• Determination of the Lattice Site of Nitrogen after Implantation into ZnSe
  Published in: Defects in Semiconductors 19 (p1395)
• Donor Doping of ZnSe: Lattice Location and Annealing Behavior of Implanted Boron
  Published in: Defects in Semiconductors 19 (p1389)
• Doping of ZnSe and II-VI Quantum Structures
  Published in: II-VI Compounds and Semimagnetic Semiconductors (p5)