Papers by Keyword: β-FeSi₂

Abstract: The studies are devoted to the development of the technology of multilayer incorporation of nanocrystals (NCs) of semiconductor chromium and iron disilicides with a layer density no less than 2x10¹⁰ cm-2, the establishment of the growth mechanism of heterostructures with two types of NCs, the determination of their crystalline quality and optical properties, as well as the creation and study of rectification and photoelectric properties of p-i-n diodes based on them. Morphologically smooth heterostructures with 6 embedded layers of CrSi2 nanocrystals and two types of embedded nanocrystals (with 4 layers of CrSi2 NCs and 2 layers of β-FeSi2 NCs) for optical studies and built-in silicon p-i-n diodes were grown for the first time. The possibility of optical identification of interband transitions in embedded nanocrystals in the photon energy range of 1.2 - 2.5 eV was determined from the reflection spectra and the strongest peaks in reflection from the integrated nanocrystals were determined: 2.0 eV for CrSi2 NCs and 1.75 eV for β-FeSi2 NCs. The created p-i-n diodes have a contact potential difference of 0.95 V, regardless of the type of embedded NCs. At 80 K, an absorption band (0.7 - 1.1 eV) was detected in the diodes, which was associated with carrier photo generation in the embedded CrSi2 and β-FeSi2 NCs. From the spectra of the photoresponse at 80 K, the band gap widths in the NCs were determined: 0.50 eV in CrSi2 and 0.70 eV in the superposition of the CrSi2 and β-FeSi2 NCs.

Abstract: Sb-doped β-FeSi₂ epitaxial films on Si(111) were grown by molecular beam epitaxy to control an electron density of β-FeSi₂. After an optimization of donor activation conditions in the Sb-doped β-FeSi₂, the electron density of 6 × 10¹⁸ cm^-3 at 300 K was achieved by thermal annealing in a N₂ ambient. In the temperature dependence of carrier density, the n-type conduction was changed to p-type conduction at low temperatures in the film annealed at high temperature (600 °C). Raman spectra of the annealed films showed that both Fe and Si sites were substituted by the doped Sb in β-FeSi₂ lattice.

Abstract: n-Type β-FeSi₂/p-type Si heterojunctions have been successfully fabricated by facing-targets direct-current sputtering at a substrate temperature of 600 °C without post-annealing and their current-voltage characteristics were measured at low temperatures ragne from 300 K down to 50 K. The ideality factor, saturation current and series resistance were estimated by the thermionic emission theory and Cheung’s method. By the thermionic emission theory, we calculated the ideality factor from the slope of the linear part from the forward lnJ-V and estimated the saturation current density from the straight line intercept of lnJ-V at a zero voltage. As decreasing temperatures from 300 down to 50 K, the value of ideality factor increased from 1.2 to 15.6, while the value of saturation current density decreased from 1.6 × 10⁻⁶ A/cm² to 3.8 × 10⁻¹⁰ A/cm². From the plots of dV/d (lnJ)-J and H(J)-J by Cheung’s method, the obtained values of series resistances are consistent with each other. The series resistances analyzed from both plots increased as decreasing temperatures.

Abstract: The upgrade recycling process of cast-iron scrap chips toward β-FeSi₂ is regarded as an eco-friendly and cost-effective production process. It is useful for reducing the material cost in fabricating β-FeSi₂ by utilizing the waste that is obtained from the manufacturing process of cast-iron components. In this research, β-FeSi₂ was successfully obtained from cast iron bscrap chips and showed good thermoelectric performance in Seebeck coefficient and electrical conductivity which is around 70% to almost 100% compared to β-FeSi₂ that was prepared from pure Fe and other publications. The thermoelectric power factor was achieved 90% performance compared to other literatures and β-FeSi₂ prepared from pure Fe.

Abstract: Iron disilicide (-FeSi2, and -FeSi2+Cu0.1wt%) were prepared by a field-activated pressure assisted synthesis(FAPAS) method from elemental powders and the thermoelectric properties were investigated. The average grain size of these products is about 0.3m. The thermal conductivity of these materials is 3-4wm-1K-1in the temperature range 300-725K. These products’ figure of merit is 28.50×10-4 in the temperature range 330-450K. The additions of Cu promote the phase transformation of -Fe2Si5 + -FeSi → β-FeSi2 and shorten the annealing time. It is proved that FAPAS is a benign and rapid process for sintering of -FeSi2 thermoelectric materials.

Abstract: Iron disilicide（-FeSi2）compounds were synthesized by field-activated pressure assisted synthesis (FAPAS) process, and their thermoelectric properties were measured. Fine microstructure with small pores was obtained in the fabricated samples. The average grain size was approximately 0.3 m. The thermal conductivity in the temperature range of 300-725 K was 3-4 Wm-1K-1, which was considerably lower than that of the same materials synthesized by other methods including SPS process. Lower thermal conductivity provided a higher figure of merit, ZT of 28.50×10-4 in the temperature range of 330-450 K.

Abstract: A β-FeSi2 sample was ball-milled for different periods in a vibratory ball-mill and studied by X-ray diffraction and Mössbauer spectroscopy. It transforms gradually with milling time into an α-FeSi2 phase.

Abstract: Fe/Si multi-layer films were fabricated on Si (100) substrates utilizing radio frequency magnetron sputtering system. Si/β-FeSi2 structure was found in the films after the deposition. Structural characterization of Fe-silicide sample was performed by transmission electron microscopy, to explore the dependence of the microstructure of β-FeSi2 film on the preparation parameters. It was found that β-FeSi2 particles were formed after the deposition without annealing, whose size is less than 20nm ,with a direct band-gap of 0.94eV in room temperature. After annealing at 850°C, particles grow lager, however the stability of thin films was still good.

Abstract: High-temperature oxidation of sintered β-FeSi2 doped with Mn and Co was evaluated at 800°C in air. Amorphous SiO2 was developed as an oxide scale. Granular ε-FeSi also appeared below the SiO2 scale as a result of consumption of Si in β-FeSi2. Growth of the oxide scale on doped FeSi2 followed a parabolic law and its rate was similar to oxidation of undoped samples. Thermoelectric properties of sintered β-FeSi2 were also evaluated before and after oxidation at 800°C for 7 days. There was no significant change in thermoelectric properties after high-temperature oxidation on β-FeSi2 sintered bodies.