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Materials Science & Technology

Papers by keyword «Annealing» Hydrogenation of III-V Semiconductors during Processing Sources of Hydrogen in III-V Device Processing Hydrogen Implantation in III-V Compound Semiconductors and its Redistribution with Annealing On Current Limitations in Porous SiC Applications The VSiCSi(SiCCSi) Complex in Electron-Irradiated 6H-SiC Defect Evolution in Ion Irradiated 6H-SiC Epitaxial Layers Technological Aspects of Ion Implantation in SiC Device Processes Electrical Behavior of Implanted Aluminum and Boron near Tail Region in 4H-SiC after High-Temperature Annealing Annealing of Aluminum Implanted 4H-SiC: Comparison of Furnace and Lamp Annealing Ar Annealing at 1600°C and 1650°C of Al+ Implanted p+/n 4H-SiC Diodes: Analysis of the J-V Characteristics Versus Annealing Temperature

Top Keywords Annealing (359 entries) Numerical Simulation (348 entries) Wear (345 entries) Fracture Toughness (344 entries) Interface (338 entries) Grain Growth (338 entries) Nanoparticle (337 entries) Precipitation (329 entries) Electron Backscattered Diffraction (EBSD) (328 entries) Hardness (324 entries)

Total: 36 pages; 359 papers ←1415161718192021222324→

Total: 100 pages; 1000 keywords ←1234567891011→