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• p301 Studies of the Distribution of Elementary Threading Screw Dislocations in 4H Silicon Carbide Wafer
  Authors: Yi Chen, Ning Zhang, Xian Rong Huang, David R. Black, Michael Dudley
• p309 Observation of Misfit Dislocations Introduced by Epi-Layer Growth on 4H-SiC
  Authors: Hirofumi Matsuhata, Hirotaka Yamaguchi, Ichiro Nagai, Toshiyuki Ohno, Ryouji Kosugi, Akimasa Kinoshita
• p317 Evolution of Basal Plane Dislocations during 4H-SiC Epitaxial Growth
  Authors: Robert E. Stahlbush, Brenda L. Van Mil, Kendrick X. Liu, Kok Keong Lew, Rachael L. Myers Ward, D. Kurt Gaskill, Charles R. Eddy Jr., X. Zhang, Marek Skowronski
• p321 Contrast of Basal Plane and Threading Edge Dislocations in 4H-SiC by X-Ray Topography in Grazing Incidence Geometry
  Authors: Hirofumi Matsuhata, Hirotaka Yamaguchi, Ichiro Nagai, Toshiyuki Ohno, Ryouji Kosugi, Akimasa Kinoshita
• p325 Slip of Basal Plane Dislocations in 4H-SiC Epitaxy
  Authors: Toshiyuki Ohno
• p329 Pair-Generation of the Basal-Plane-Dislocation during Crystal Growth of SiC
  Authors: Taro Nishiguchi, Tomoaki Furusho, Toshiyuki Isshiki, Koji Nishio, Hiromu Shiomi, S. Nishino
• p333 Characterization of Dislocations and Micropipes in 4H n⁺ SiC Substrates
  Authors: Ping Wu, Murugesu Yoganathan, Ilya Zwieback, Yi Chen, Michael Dudley
• p337 Raman Scattering Study of Stress Distribution around Dislocation in SiC
  Authors: D. Matsuoka, H. Yamamoto, S. Nishino, Noriyuki Hasuike, K. Kisoda, Hiroshi Harima
• p1 Piezoelectric Actuators 2008: Key Factors for Commercialization
  Authors: K. Uchino
• p11 Tailored Intelligent Materials
  Authors: R.P. Tandon