Search for: «Interface defects SiC»

A219 SiC/Si: Interface Defects
A599 SiC/Si: Interface Defects
p543 Positron Annihilation Studies of Defects at the SiO₂/SiC Interface
Authors: James Dekker, Kimmo Saarinen, H.Ö. Ólafsson, Einar O. Sveinbjörnsson
p639 Characterization of MOS Capacitors Fabricated on n-type 4H-SiC Implanted with Nitrogen at High Dose
Authors: Antonella Poggi, Francesco Moscatelli, Yasuto Hijikata, Sandro Solmi, Michele Sanmartin, Fabrizio Tamarri, Roberta Nipoti
p287 Single-Domain 3C-SiC Epitaxially Grown on 6H-SiC by the VLS Mechanism
Authors: Maher Soueidan, Gabriel Ferro, J. Stoemenos, E.K. Polychroniadis, Didier Chaussende, F. Soares, Sandrine Juillaguet, Jean Camassel, Yves Monteil
A422 SiC/SiO₂: Interface Defects
p437 Characterisation of 4H-SiC PiN Diodes by Micro-Raman Scattering and Photoemission
Authors: Aurelie Thuaire, Michel Mermoux, Alexandre Crisci, Nicolas Camara, Edwige Bano, Francis Baillet, Etienne Pernot
p553 Imaging and Metrology of Silicon Carbide Wafers by Laser-Based Optical Surface Inspection System
Authors: Tetsuo Hatakeyama, K. Ichinoseki, N. Higuchi, Kenji Fukuda, Kazuo Arai
p549 XPS Study of the Electronic Properties of the Ce/4H-SiC Interface, and the Formation of the SiO₂/Ce₂Si₂O₇/4H-SiC Interface Structure upon Oxidation
Authors: Morten Kildemo, Ulrike Grossner, B.G. Svensson, S. Raaen
p567 Identification of Deep Level Defects in SiC Bipolar Junction Transistors
Authors: Patrick M. Lenahan, N.T. Pfeiffenberger, T.G. Pribicko, Aivars J. Lelis