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Search for: «EPR study of single silicon vacancy-related defects in 4H- and 6H-SiC»

• p573 Low Temperature Brittle Fracture in C-Mn Weld Metal
  Authors: F.H. Baumann, R. Moskovic, R.K. Wild, P.E.J. Flewitt
• p821 The Carbon Vacancy Pair in 4H and 6H SiC
  Authors: N.T. Son, P.N. Hai, A. Shuja, W.M. Chen, J. Lennart Lindström, Bo Monemar, Erik Janzén
• p473 Annealing Behaviour of Vacancy-and Antisite-Related Defects in Electron-Irradiated 4H-SiC
  Authors: Z. Zolnai, N.T. Son, Bjorn Magnusson, Christer Hallin, Erik Janzén
• p381 Intrinsic Defects in HPSI 6H-SiC: an EPR Study
  Authors: P. Carlsson, N.T. Son, Bjorn Magnusson, Anne Henry, Erik Janzén
• p437 Defects in High-Purity Semi-Insulating SiC
  Authors: N.T. Son, Bjorn Magnusson, Z. Zolnai, Alexsandre Ellison, Erik Janzén
• p527 Divacancy Model for P6/P7 Centers in 4H- and 6H-SiC
  Authors: N.T. Son, T. Umeda, J. Isoya, A. Gali, M. Bockstedte, Bjorn Magnusson, Alexsandre Ellison, Norio Morishita, Takeshi Ohshima, Hisayoshi Itoh, Erik Janzén
• p785 Donors and Acceptors in SiC-Studies with EPR and ENDOR
  Authors: Johann Martin Spaeth
• p501 Photo-EPR and Hall Measurements on Undoped High Purity Semi-Insulating 4H-SiC Substrates
  Authors: E.N. Kalabukhova, S.N. Lukin, D.V. Savchenko, W.C. Mitchel, William D. Mitchell
• p473 Point Defects in 4H SiC Grown by Halide Chemical Vapor Deposition
  Authors: Mary Ellen Zvanut, Hun Jae Chung, A.Y. Polyakov, Marek Skowronski
• p795 Dopant-related Complexes in SiC
  Authors: A. Gali, J. Miró, Peter Deák, Robert P. Devaty, W.J. Choyke