Search for: «N. Inoue, M. Nakatsu, H, Ono, Y. Inoue»

p1093 SiC Devices with ONO Stacked Dielectrics
Authors: Lori A. Lipkin, John Palmour
p677 High-Reliability ONO Gate Dielectric for Power MOSFETs
Authors: Satoshi Tanimoto, Hideaki Tanaka, Tetsuya Hayashi, Yoshio Shimoida, Masakatsu Hoshi, Teruyoshi Mihara
p955 Impact of Dislocations on Gate Oxide in SiC MOS Devices and High Reliability ONO Dielectrics
Authors: Satoshi Tanimoto
p795 Negative Field Reliability of ONO Gate Dielectric on 4H-SiC
Authors: Satoshi Tanimoto, Tatsuhiro Suzuki, Shigeharu Yamagami, Hideaki Tanaka, Tetsuya Hayashi, Yukie Hirose, Masakatsu Hoshi
A215 CdTe: Hg Diffusion
A24 CdTe: Hg Diffusion
p892 Modified Tartagli Method for Calculation of Jominy Hardenability Curve
Authors: Wojciech Sitek, Jacek Trzaska, Leszek A. Dobrzański
p609 Annealing Behaviour of New Nitrogen Infrared Absorption Peaks in CZ Silicon
Authors: N. Inoue, M. Nakatsu, K. Tanahashi, Hiroshi Yamada-Kaneta, Haruhiko Ono, V.D. Akhmetov, O. Lysytskiy, Hans Richter
p621 Infrared Absorption Measurement of Carbon Concentration down to 1x10¹⁴/cm³ in CZ Silicon
Authors: N. Inoue, M. Nakatsu
A73 Hg Diffusion: CdTe