Search for: «T. Hatakeyama,sic»
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p339
Determination of Impact Ionization Coefficients Measured from 4H Silicon Carbide Avalanche Photodiodes
Authors: W.S. Loh, C. Mark Johnson, J.S. Ng, Peter Sandvik, Steve Arthur, Stanislav Soloviev, J.P.R. David -
p627
Internal Friction Characterization of Metal Matrix Composites
Authors: L. Parrini, R. Schaller -
p1175
Fabrication of 4H-SiC Floating Junction Schottky Barrier Diodes (Super-SBDs) and their Electrical Properties
Authors: Chiharu Ota, Johji Nishio, Tetsuo Hatakeyama, Takashi Shinohe, Kazutoshi Kojima, Shin Ichi Nishizawa, Hiromichi Ohashi -
p553
Imaging and Metrology of Silicon Carbide Wafers by Laser-Based Optical Surface Inspection System
Authors: Tetsuo Hatakeyama, K. Ichinoseki, N. Higuchi, Kenji Fukuda, Kazuo Arai -
p921
Process and Device Simulation of a SiC Floating Junction Schottky Barrier Diode (Super-SBD)
Authors: Tetsuo Hatakeyama, Johji Nishio, Takashi Shinohe -
p881
Electrical Characteristics Temperature Dependence of 600V-Class Deep Implanted Gate Vertical JFET
Authors: Makoto Mizukami, Osamu Takikawa, Seiji Imai, Kozo Kinoshita, Tetsuo Hatakeyama, Tomokazu Domon, Takashi Shinohe -
p1179
Optimization of a SiC Super-SBD Based on Scaling Properties of Power Devices
Authors: Tetsuo Hatakeyama, Chiharu Ota, Johji Nishio, Takashi Shinohe -
p2041
Comparative Studies of Nanoscale SiC Whisker and Si/N/C Doped MgB2 Tapes
Authors: Xian Ping Zhang, Yan Wei Ma, Zhao Shun Gao, Dong Liang Wang, Zheng Guang Yu, Gen Nishijima, K. Watanabe, Jian Dong Guo -
p829
Investigation of Degradation of Inversion Channel Mobility of SiC MOSFET due to the Increase of Channel Doping
Authors: Tetsuo Hatakeyama, Takatoshi Watanabe, Junji Senzaki, Makoto Kato, Kenji Fukuda, Takashi Shinohe, Kazuo Arai -
p783
Impact of the Wafer Quality on the Reliability of MOS Structure on the C-Face of 4H-SiC
Authors: Tetsuo Hatakeyama, Takuma Suzuki, Junji Senzaki, Kenji Fukuda, H. Matsuhata, Takashi Shinohe, Kazuo Arai