Performance Optimization of Pressure Sensor Based on Suspended Gate MOSFET


Article Preview

This paper examines the modeling, simulation and optimization of CMOS–MEMS integrated pressure sensor based on suspended gate MOSFET. The pressure Sensor consists of a square poly silicone suspended membrane, which is the movable gate of the NMOS. This NMOS is designed using 2 μm CMOS technology. The mathematical model describing the complete behaviour of the PSFET pressure sensor has been described. Finite element method (FEA) based COMSOL Multiphysics is utilized for the simulation of pressure sensor. The simulation results show that, the output current of the pressure sensor varied from 355 to 3624 μA as the pressure changed from zero to 180 kPa and high pressure sensitivity of 15,18μA/kPa. Furthermore, this study emphasizes on the influence of the channel geometric parameters on the aforementioned characteristics to optimize the sensor performance.






K. Salah and K. Fouad, "Performance Optimization of Pressure Sensor Based on Suspended Gate MOSFET", Advanced Engineering Forum, Vol. 30, pp. 43-53, 2018

Online since:

November 2018




* - Corresponding Author

[1] F. Deng, Y. He, B. Li, L. Zuo, X. Wu, Z. Fu, A CMOS Pressure Sensor Tag Chip for Passive Wireless Applications, Sensors. 15 (2015) 6872-6884..


[2] N.A.M. Yunus, I.A. Halin, N. Sulaiman, N.F. Ismail, O.K. Sheng, Valuation on MEMS Pressure Sensors and Device Applications, World Academy of Science, Engineering and Technology, International Journal of Electrical, Computer, Energetic, Electronic and Communication Engineering. 9 (2015).

[3] P.K. Rathore, B.S. Panwar, CMOS-MEMS based current mirror MOSFET embedded pressure sensor for healthcare and biomedical applications, Advanced Materials Research. 647 (2013) 315-320..


[4] J.T. Suminto, W.H. Ko, Pressure-sensitive insulated gate field-effect transistor (PSIGFET), Sensors and Actuators A: Physical. 21 (1990) 126-132.


[5] S. Kemouche, F. Kerrour Geometry effect of suspended membrane on the sensitivity of pressure sensor field effect transistor (PSFET)," in Proc of The International Conference on Recent Advances in Electrical Systems (ICRAES,17) (2017)69-152.

[6] R.S. Jachowicz, Z.M. Ażgin, FET pressure sensor and iterative method for modelling of the device, Sensors and Actuators A: Physical. 97 (2002) 369-378.


[7] A. Ajay, K. Bhat, N. Bhat, S. Kulkarni, Novel MOSFET Based Pressure Sensor That Uses Combined Channel Piezoresistance and Gate Capacitance Effects, Recent Trends in Sensor Research & Technology. 2 (2015) 30-39.

[8] B.-M. Kim, B.-J. Kim, J.-S. Kim, Fabrication and characterisation of field-effect transistor-type pressure sensor with metal–oxide–semiconductor/microelectromechanical systems processes, Micro & Nano Letters, IET. 10 (2015) 483-486..


[9] L. Svensson, J. Plaza, M. Benitez, J. Esteve, E. Lora-Tamayo, Surface micromachining technology applied to the fabrication of a FET pressure sensor, Journal of Micromechanics and Microengineering. 6 (1996) 80-83.


[10] C.-L. Dai, P.-H. Kao, Y.-W. Tai, C.-C. Wu, Micro FET pressure sensor manufactured using CMOS-MEMS technique, Microelectronics Journal. 39 (2008) 744-749..


[11] N. Marsi, B.Y. Majlis, A.A. Hamzah, F. Mohd-Yasin, Comparison of mechanical deflection and maximum stress of 3C SiC-and si-based pressure sensor diaphragms for extreme environment,, in Proc of 10th IEEE International Conference on Semiconductor Electronics (ICSE) (2012).


[12] S. Kohli, A. Saini, MEMS Based Pressure Sensor Simulation For Healthcare And Biomedical Applications, International Journal of Engineering Sciences & Emerging Technologies. 6 (2013) 308-315.

[13] N. Marsi, B. Majlis, A. Hamzah, F. Mohd-Yasin, The mechanical and electrical effects of MEMS capacitive pressure sensor based 3C-SiC for extreme temperature, Journal of Engineering. 2014 (2014) 8 pages..


[14] M. Pourgholam, B.A. Ganji, Modelling of Drain Current of MOSFET Transistor in Terms of Gate Oxide Thickness, Majlesi Journal of Telecommunication Devices. 5 (2016) 57-62.

[15] M. Maksimović, G. Stojanović, Analysis of Geometry Influence on Performances of Capacitive Pressure Sensor, Faculty of electrical engineering university of BANJA LUKA. 13 (2009) 41-45.

[16] S. Baishya, S. Deb, Modeling and simulation study of AC characteristics of an NMOS based High Pressure Sensor,, in Proc of International Conference on Green Computing Communication and Electrical Engineering (ICGCCEE) (2014)1-6.


[17] F. Kerrour, M.S. Kemouche, A. Beddiaf, Performance Optimization of a Capacitive Pressure Sensor,, in Proc of 4th International Conference on Materials and Applications for Sensors and Transducers (2015)101-105..


[18] M. Bhattacharjee, N. Mandal, H. Nemade, D. Bandyopadhyay, Simulation of a Voltage Controlled Resistor Mimicking the Geometry of a MOSFET Device having Graphite Channel,, in Proc of COMSOL Conference in Bangalore ( 2014.).

[19] K.J. Reddy, C.K. Malhi, R. Pratap, N. Bhat, Coupled numerical analysis of suspended gate field effect transistor (sgfet),, in Proc of 1st International Symposium on Physics and Technology of Sensors (ISPTS) (2012)141-144.


[20] P.S. Roy, D. Chakraborty, M. Chattopadhyay, A Study of Silicon based MEMS Capacitive Sensor for Absolute Pressure Measurement of a Specific Range, International Conference on Microelectronics, Circuits and Systems (MICRO-2014), International Journal of Computer Applications, 2014, p.12.

[21] S. Franssila, Introduction to Microfabrication, John Wiley & Sons, (2004).

[22] J.-M. Sallese, W. Grabinski, V. Meyer, C. Bassin, P. Fazan, Electrical modeling of a pressure sensor MOSFET, Sensors and Actuators A: Physical. 94 (2001) 53-58.


[23] A.E. Kubba, A. Hasson, A.I. Kubba, G. Hall, A micro-capacitive pressure sensor design and modelling, J. Sens. Sens. Syst. 5 (2016) 95-112..