Modulus and Internal Friction of W-Doped VO2 Thin Films

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The thin films of W-doped VO2 were synthesized onto Mo substrates using reactive DC and RF magnetic co-sputtering deposition techniques. The effects of W dopant on the semiconductor to metal phase transition of bare VO2 were investigated with measuring X-ray diffraction (XRD) , QJ31Wheatstone Bridge and the internal friction and modulus vs temperature. The transition temperatures of VO2 thin film from monoclinic semiconductor to tetragonal metal are decreased from 68°C to 40°C with the curves of resistance vs temperature and modulus vs temperature. In addition to, the size of grains W-doped VO2 is more than that of un-doped VO2, but more smoother.

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Periodical:

Edited by:

Han Zhao

Pages:

3343-3346

DOI:

10.4028/www.scientific.net/AMM.130-134.3343

Citation:

H.Q. Li et al., "Modulus and Internal Friction of W-Doped VO2 Thin Films", Applied Mechanics and Materials, Vols. 130-134, pp. 3343-3346, 2012

Online since:

October 2011

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$35.00

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