Modulus and Internal Friction of W-Doped VO2 Thin Films


Article Preview

The thin films of W-doped VO2 were synthesized onto Mo substrates using reactive DC and RF magnetic co-sputtering deposition techniques. The effects of W dopant on the semiconductor to metal phase transition of bare VO2 were investigated with measuring X-ray diffraction (XRD) , QJ31Wheatstone Bridge and the internal friction and modulus vs temperature. The transition temperatures of VO2 thin film from monoclinic semiconductor to tetragonal metal are decreased from 68°C to 40°C with the curves of resistance vs temperature and modulus vs temperature. In addition to, the size of grains W-doped VO2 is more than that of un-doped VO2, but more smoother.



Edited by:

Han Zhao




H.Q. Li et al., "Modulus and Internal Friction of W-Doped VO2 Thin Films", Applied Mechanics and Materials, Vols. 130-134, pp. 3343-3346, 2012

Online since:

October 2011




[1] F. Morin et. al., Phys. Rev. Lett. Papers 3, 34 (1959).

[2] R. Flannery and J. E. Miller, Proc. SPIE 1689, 379 (1992).

[3] C. G. Granqvist, E. Avendaño, and A. Azens, Thin Solid Films. Papers 442, 201, (2003).

[4] Kivaisi, R. T., Samiji, M., Solar Energy Mater. And Solar Cells, 57(2), 141-152(1999).

[5] Nagashima, M., Wade, H., Thin Solid Films, 312, 61(1998).

[6] Speck, K.R., Thin solid Films, 165(1), 317-322(1988).