Study on Light Intensity Enhancement of ZnO/ITO/P-GaN Light-Emitting Diodes

Abstract:

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Light intensity enhancement of GaN-based blue light-emitting diodes (LEDs) is performed using different surface roughening technologies. Three roughening technologies are applied that contain surface roughening of p-GaN, textured indium tin oxide (ITO) on roughened p-GaN, and growing ZnO nanorods on textured ITO/p-GaN. A roughened p-GaN surface was grown on the c-plane sapphire substrate at temperature 800 °C. The morphologies of the textured LEDs with roughness in the range from 9.67 nm to 51.13 nm were observed. The light output efficiency of LED with roughened ITO layer is increased up to 73.8 %. Different dimensions of LEDs can be driven by constant injection current 20 mA without increasing threshold voltage, and larger size of ZnO/ITO/p-GaN LED shows higher luminance intensity. The LEDs with ZnO nanorods on roughened ITO/GaN have shown great performance to enhance the power conversion efficiency.

Info:

Periodical:

Edited by:

Han Zhao

Pages:

4084-4087

DOI:

10.4028/www.scientific.net/AMM.130-134.4084

Citation:

H. C. Chang et al., "Study on Light Intensity Enhancement of ZnO/ITO/P-GaN Light-Emitting Diodes", Applied Mechanics and Materials, Vols. 130-134, pp. 4084-4087, 2012

Online since:

October 2011

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$35.00

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