Graphene Film Growth on Cu Foil via Direct Carbon Atoms Deposition by Using SSMBE

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Graphene film has been successfully grown on Cu foil by directly depositing carbon atoms with a solid source molecular beam epitaxy (SSMBE) system. The structural and electronic properties of the graphene sample are characterized by Raman spectroscopy, near edge X-ray absorption fine structure (NEXAFS) and X-ray photoelectron spectroscopy (XPS). Results indicate that the graphene has the tubostratic stacking structure.

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Periodical:

Edited by:

Yongbo Shao, Shuguang Hao, Yuping Luo, Jibo Xing and Zhiyong Liu

Pages:

241-244

DOI:

10.4028/www.scientific.net/AMM.174-177.241

Citation:

Z. L. Liu et al., "Graphene Film Growth on Cu Foil via Direct Carbon Atoms Deposition by Using SSMBE", Applied Mechanics and Materials, Vols. 174-177, pp. 241-244, 2012

Online since:

May 2012

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$35.00

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