Etching Volume Effect on the Morphology of Silicon Etched by Metal-Assisted Chemical Method

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Assisted by Ag nanoparticles, Si substrates were etched in aqueous solutions containing hydrofluoric acid (HF) and hydrogen peroxide (H2O2) with different volumes of etching solution. The etching morphology of Si wafers was found to be affected by the volumes. In etching solutions with smaller volume, the pores were created; in etching solutions with larger volume, the nanostructure composed of nanowires and nanopores (pores+wires nanostructure) were generated. In addition, the lengths of these Si nanostructures increased with the increase of the etching volume. Possible formation mechanism for this phenomenon was discussed.

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Periodical:

Edited by:

Xianghua Liu, Zhenhua Bai, Yuanhua Shuang, Cunlong Zhou and Jian Shao

Pages:

1141-1145

DOI:

10.4028/www.scientific.net/AMM.217-219.1141

Citation:

W. Wang et al., "Etching Volume Effect on the Morphology of Silicon Etched by Metal-Assisted Chemical Method", Applied Mechanics and Materials, Vols. 217-219, pp. 1141-1145, 2012

Online since:

November 2012

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$38.00

[1] X.F. Duan, C.M. Niu, V. Sahi, J. Chen, J.W. Parce, S. Empedocles and J.L. Goldman: Nature Vol. 425 (2003), p.674.

[2] M.W. Shao, H. Yao, M.L. Zhang, N.B. Wong, Y.Y. Shan and S.T. Lee: Appl. Phys. Lett. Vol. 87 (2005), p.106.

[3] C. L´ evy-Cl´ ement, S. Lust, S. Bastide, Q.N. Lˆ e and D. Sarti: Phys. Stat. Sol. A Vol. 197 (2003), p.27.

[4] D.S.Y. Hsu and H.F. Gray: Appl. Phys. Lett. Vol. 63 (1993), p.159.

[5] Q. Wang, J.J. Li, Y.J. Ma, X.D. Bai, Z.L. Wang, P. Xu, C.Y. Shi, B.G. Quan, S.L. Yue and C.Z. Gu: Nanotechnology Vol. 16 (2005), p.2919.

[6] L. Schubert, P. Werner, N.D. Zakharov, G. Gerth, F. Kolb, L. Long, U. Gösele and T.Y. Tan: Appl. Phys. Lett. Vol. 84 (2004), p.4968.

[7] Y.H. Yang, S.J. Wu, H.S. Chui, P.I. Lin and Y.T. Chen: J. Phys. Chem. B Vol. 108 (2004), p.846.

[8] J. Westwater, D.P. Gosain and S. Usui: Phys. Stat. Solidi A Vol. 165 (1998), p.37.

[9] K.Q. Peng and S. Lee: Adv. Mater. Vol. 23 (2011), p.198.

[10] Z.P. Huang, N. Geyer, P. Werner, J.D. Boor and U. Gösele: Adv. Mater. Vol. 23 (2011), p.285.

[11] K. Tsujino and M. Matsumura: Electrochimica Acta Vol. 53 (2007), p.28.

[12] S.C. Shiu, H.J. Syu, S.C. Huang and C.F. Lin: Proceedings of 10th IEEE International Conference on Nanotechnology Joint Symposium with Nano Korea (KINTEX, Korea, August 17 – 20, 2010), p.474.

[13] K.Q. Peng, A.J. Lu, R.Q. Zhang and S.T. Lee: Adv. Funct. Mater. Vol. 18 (2008), p.3026.

[14] Z.P. Huang, T. Shimizu, S. Senz, Z. Zhang, N. Geyer and U. Gösele: J. Phys. Chem. C Vol. 114 (2010), p.10683.

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