Wet-Etching Characteristics of ‹111› Orientated Silicon and its Application

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In this paper, a method of fabricating single crystal silicon microstructures on oriented silicon wafer is developed. The relationship of the (111) planes on silicon silicon wafer is analyzed based on the crystal lattice of the silicon, the method of judging these (111) planes is given. An anisotropy wet-etching experiment is done to verify the etching characteristics of silicon. The process of fabricating three dimension structures on silicon wafer is then given out and some basic MEMS structures such as cantilever beams, doubly-clamped beams are fabricated. With this method, it is easy to define the shape and thickness of the microstructure and the process is not complicate. Moreover, the structures made in this way have higher structural precision and mechanical strength.

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Edited by:

Mohamed Othman

Pages:

2423-2426

Citation:

H. Y. Yu and M. Qin, "Wet-Etching Characteristics of ‹111› Orientated Silicon and its Application", Applied Mechanics and Materials, Vols. 229-231, pp. 2423-2426, 2012

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November 2012

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$38.00

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DOI: https://doi.org/10.1109/jmems.2009.2035717