Post-Growth Annealing of (Ga, Mn)As under Sb Capping

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(Ga,Mn)As is a model diluted ferromagnet system in which the atomic spins of Mn ions are ferromagnetically arranged due to the exchange interaction with valence band holes. An important tecchnological concern regarding this system has been approaches that might result in reduction of the density of Mn interstitial and increase in the content of Mn in order to make the system practically feasible. To accomplish the objective we report the results of our recent synchrotron radiation based spectroscopic investigations concening annealing induced modification of as-grown (Ga,Mn)As layers covered with Sb capping.

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Edited by:

Mohamed Othman

Pages:

243-246

Citation:

I. Ulfat et al., "Post-Growth Annealing of (Ga, Mn)As under Sb Capping", Applied Mechanics and Materials, Vols. 229-231, pp. 243-246, 2012

Online since:

November 2012

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