5A 1300V Trenched and Implanted 4H-SiC Vertical JFET


Article Preview

A silicon carbide (SiC) vertical channel junction field effect transistor (VJFET) was fabricated based on in-house SiC epitaxial wafer with lift-off trenched and implanted method. Its blocking voltage exceeds 1300V at gate bias VG = -6V and forward drain current is in excess of 5A at gate bias VG = 3V and drain bias VD = 3V. The SiC VJFET device’s current density is 240A/cm2 at VG= 3V and VD = 3V, with related specific on-resistance 8.9mΩ•cm2. Further analysis reveals that the on-resistance depends greatly on ohmic contact resistance and the bonding spun gold. The specific on-resistance can be further reduced by improving the doping concentration of SiC channel epilayer and the device’s ohmic contact.



Edited by:

Mohamed Othman




G. Chen et al., "5A 1300V Trenched and Implanted 4H-SiC Vertical JFET", Applied Mechanics and Materials, Vols. 229-231, pp. 824-827, 2012

Online since:

November 2012





[1] M. S. Mazzola, L. Cheng, J. R. B. Casady, D. Seale, V. Bondarenko, R. Kelley, and J. B. Casady, presented in The 6th International All Electric Combat Vehicle (AECV) Conference 2005, Bath, England, June 15, 2005, website: http: /www. aecv2005. org. uk.

[2] Rueschenschmidt K, T reu M, Rupp R, et al. SiC JFET: currently the best solution for an unipolar SiC high power switch. Material Science Forum, 2009, 600-603: 901-906.

DOI: https://doi.org/10.4028/www.scientific.net/msf.600-603.901

[3] http: /www. semisouth. com/products/uploads/DS_SJDP120R085_rev1. 0. pdf.

[4] NI Weijiang, LI Yuzhu, LI Zheyang, et al. 1200V Normally-on 4H-SiC VJFET. RESEARCH & PROGRESS OF SSE, Vol. 31, No. 2, Apr., 2011, 103-106.

[5] V. Veliadis, T. McNutt, M. Snook, H. Hearne, P. Potyraj, and C. Scozzie, A 1680-V (at 1 mA/cm2) 54-A (at 780 W/cm2) Normally ON 4H-SiC JFET With 0. 143-cm2 Active Area, IEEE ELECTRON DEVICE LETTERS, VOL. 29, NO. 10, OCTOBER 2008, 1132-1134.

DOI: https://doi.org/10.1109/led.2008.2002907

[6] V. Veliadis, M. Snook, T. McNutt, H. Hearne, P. Potyraj, Aivars Lelis, and C. Scozzie, A 2055-V (at 0. 7 mA/cm2) 24-A (at 706 W/cm2) Normally On 4H-SiC JFET With 6. 8-mm2 Active Area and Blocking-Voltage Capability Reaching the Material Limit, IEEE ELECTRON DEVICE LETTERS, VOL. 29, NO. 12, DECEMBER 2008, 1325-1327.

DOI: https://doi.org/10.1109/led.2008.2006766

[7] CHEN Gang, BAI Song, LI ZheYang, et al. 4H-SiC Ohmic Contact and Measure Technology, RESEARCH & PROGRESS OF SSE, 2008, 28(1): 38-41.