Research on Accumulation PMOS Capacitors Based on Strained-Si/SiGe Material


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This paper presents a physical-based model for accumulation PMOS capacitor based on strained-Si/SiGe material. With this model, the physical mechanism of the “plateau”, observed in accumulation region of the C-V characteristics of the strained-Si(SSi)/SiGe PMOS capacitor, is studied. The results from the model show excellent agreement with the experimental data. The proposed model can provide valuable reference to the strained-Si device design and has been implemented in the software for extracting the parameter of strained-Si MOSFET.



Edited by:

Guangfan Li and Chaohe Chen




B. Wang et al., "Research on Accumulation PMOS Capacitors Based on Strained-Si/SiGe Material", Applied Mechanics and Materials, Vols. 275-277, pp. 1968-1973, 2013

Online since:

January 2013




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