Critical Electric Field of InGaN p-i-n Solar Cell

Abstract:

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We present a study of electric field effect on the efficiency of GaN/In0.1Ga0.9N p-i-n solar cells by using the advanced physical models of semiconductor devices (APSYS) simulation program. In this study, the electric field strength and other parameters such as optimum thickness of p-type layer and efficiency of GaN/In0.1Ga0.9N p-i-n solar cells with different i-layer thicknesses have been performed. On the basis of simulating results, for a high efficiency solar cell, it is found that the optimum p-type layer concentration is above 4×1016 cm-3 and the suitable thickness is between 0.1 to 0.2 μm. For different i-layer thickness and p-doping concentrations, a critical electric field (Fc) has been found at 100 kV/cm. It is worth to note that when the electric field strength of i-layer below Fc value, the solar cell efficiency will dramatically decrease. Thus Fc can be seen as an index for acquiring the quality of solar device.

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Periodical:

Edited by:

Wen-Hsiang Hsieh

Pages:

1168-1172

DOI:

10.4028/www.scientific.net/AMM.284-287.1168

Citation:

D. Y. Lin, C. Y. Chi, "Critical Electric Field of InGaN p-i-n Solar Cell", Applied Mechanics and Materials, Vols. 284-287, pp. 1168-1172, 2013

Online since:

January 2013

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$35.00

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