Experimental Investigation of the Impact of Annealing on Resistivity of Boron-Doped Hydrogenated Nanocrystalline Silicon Thin Films

Abstract:

Article Preview

Boron-doped hydrogenated nanocrystalline silicon (nc-Si:H) thin films were deposited by plasma enhanced chemical vapor deposition (PECVD). Microstructures of these films were characterized and analyzed by Raman spectrum and atomic force microscopy (AFM). Thickness and resistivity of these films was measured by high-resolution profilometer and four-point probe respectively. The impact of annealing on boron-doped nc-Si:H thin films’ resistivity and the relationship between resistivity and microstructure were investigated. The results show that annealing and the annealing temperature have great impact on resistivity of nc-Si:H thin films as a result of microstructures changing after annealing. Resistivity of nc-Si:H thin films decreases after annealing, but it rises with the increasing annealing temperature in the range of 250°C to 400°C.

Info:

Periodical:

Edited by:

Honghua Tan

Pages:

1883-1887

DOI:

10.4028/www.scientific.net/AMM.29-32.1883

Citation:

H. B. Pan et al., "Experimental Investigation of the Impact of Annealing on Resistivity of Boron-Doped Hydrogenated Nanocrystalline Silicon Thin Films", Applied Mechanics and Materials, Vols. 29-32, pp. 1883-1887, 2010

Online since:

August 2010

Export:

Price:

$35.00

[1] Jae-Hyun Shim, Nam-Hee Cho and El-Hang Lee: Characterization of hydrogenated nanocrystalline silicon thin films prepared with various negative direct current biases, Materials Research Society, Vol. 23 (2008), pp.790-797.

DOI: 10.1557/jmr.2008.0092

[2] R. Baghdad, D. Benlakehal and X. Portier: Deposition of nanocryctalline silicon thin films: Effect of total pressure and substrate temperature, Thin Solid Films, Vol. 516(2008), pp.3965-3970.

DOI: 10.1016/j.tsf.2007.07.190

[3] H. Chen and W.Z. Shen: Optical characterization of boron-doped nanocrystalline Si: H thin films, Surface and Coatings Technology, Vol. 198(2005), pp.98-103.

DOI: 10.1016/j.surfcoat.2004.10.051

[4] J.N. Ding, H.S. Qi and N.Y. Yuan: Influence of post-annealing on the mechanical and electrical properties of boron-doped nanocrystalline silicon thin films, 2009 4th IEEE International Conference on Nano/Micro Engineered and Molecular Systems, Shenzhen, China, January 05-January 08.

DOI: 10.1109/nems.2009.5068607

[5] P. Kumar, F. Zhu, and A. Madan: Electrical and structural properties of nano-crystalline silicon intrinsic layers for nano-crystalline silicon solar cells prepared by very high frequency plasma chemical vapor deposition, International Journal of Hydrogen Energy, Vol. 33(2008).

DOI: 10.1016/j.ijhydene.2008.02.037

[6] Le Donne, S. Binetti and G. Isella: Structural characterization of nc-Si films grown by low-energy PECVD on different substrates, Applied Surface Science, Vol. 254(2008), pp.2804-2808.

DOI: 10.1016/j.apsusc.2007.10.025

[7] He YL, Hu GY, and Yu MB: Conduction mechanism of hydrogenated nanocrystalline silicon films, Phys. Rev. B., Vol. 59(1999), pp.15352-15357.

DOI: 10.1103/physrevb.59.15352

[8] Cywar A., Silva H. and Gokirmak A.: Melting and crystallization of nanocrystalline silicon microwires through rapid self-heating, Applied Physics Letters, Vol. 94(2009), p.251910.

DOI: 10.1063/1.3159877

In order to see related information, you need to Login.