Thermal Resistance Analysis and Simulation of IGBT Module with High Power Density


Article Preview

As the IGBT power modules have promising potentials in the application of the field of traction or new energy, the higher power density and higher current rating of the IGBT module become more and more attractive. Thermal resistance is one of the most important characteristics in the application of power semiconductor module. A new 1500A/3300V IGBT module in traction application is developed successfully by Zhuzhou CSR Times Electric Co., Ltd (Lincoln). Thermal resistance management of this IGBT module with high power density is performed in this paper. Based on thermal nodes network, an equivalent circuit model for thermal resistance of power module is highlighted from which the steady state thermal resistance can be optimized by theoretical analysis. Furthermore, thermal numerical simulation of 1500A/3300V IGBT module is accomplished by means of finite element model (FEM). Finally, the thermal equivalent model of the IGBT module is verified by simulation results.



Edited by:

Yun-Hae Kim and Prasad Yarlagadda




Y. B. Wu et al., "Thermal Resistance Analysis and Simulation of IGBT Module with High Power Density", Applied Mechanics and Materials, Vols. 303-306, pp. 1902-1907, 2013

Online since:

February 2013




[1] B. Jackson: Power Density and Performance Improvement of New Automotive Power Semiconductor Packages, Power Electronics Europe, 1 (2010) 20- 22.

[2] N. Pluschke: State-of-the-art Power Module Design for Renewable Energy Application, Journal of International Council on Electrical Engineering, 2 (2012) 79-83.


[3] K Weidner, M Kaspar, N Seliger: Planar interconnect technology for Power module system integration, CIPS 2012, Nuremberg, Germany, March, 6-8, 2012, paper 13. 1.

[4] K. Guth, N. Oeschler, L. Böwer, et al: New assembly and interconnect technologies for power modules, CIPS 2012, Nuremberg, Germany, March, 6-8, 2012, paper 10. 1.

[5] R. Ott, M. Baler, R. Tschirbs, D. Siepe: New superior assembly technologies for module with highest power densities, PCIM 2010, Nuremberg, Germany, May, 4-6, 2010, Paper 528.

[6] I. Josifović, J. Popović-Gerber, J.A. Ferreira: Thermal Management Concepts for Power Sandwich Industrial Drive, CIPS 2012, Nuremberg, Germany, March, 6-8, 2012, Paper P05.

[7] Y. Nishimura, T. Nishizawa, E. Mochizuki, et al: Development of a new generation RoHS IGBT module structure for power management, Tran. Jnp. Instit. Electro. Pack., 1(2008) 40-47.

[8] L. Zhang, S. Azzopardi, A. Gracia, et al: Development of high temperature packaging technologies for SiC power devices based on finite elements simulations and experiments: thermal approach, CIPS 2012, Nuremberg, Germany, March, 6-8, 2012, paper 11.