Modeling of Vertical GaN Based Resonant Cavity Light-Emitting Diode

Abstract:

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Vertical structure of resonant cavity light-emitting diode (RCLED) is presented in this paper to further improve the photoelectric performance of the device. Modeling and 2D simulation have been proceeded with Crosslight APSYS[, the analysis and modeling software for semiconductor devices. Main results of the simulation are listed and discussed. The peak wavelength locates at about 550 nm with half-wave width of about 10 nm and its output power has been enhanced by 25% than the conventional one. The results prove that vertical RCLED is a considerable source for POF-based fiber communication.

Info:

Periodical:

Edited by:

Liangzhong Jiang

Pages:

409-414

DOI:

10.4028/www.scientific.net/AMM.389.409

Citation:

K. Li, Z. Y. Guo, M. J. Li, M. J. Zhu, "Modeling of Vertical GaN Based Resonant Cavity Light-Emitting Diode", Applied Mechanics and Materials, Vol. 389, pp. 409-414, 2013

Online since:

August 2013

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Price:

$35.00

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