Paper Title:
Modeling of Vertical GaN Based Resonant Cavity Light-Emitting Diode
  Abstract

Vertical structure of resonant cavity light-emitting diode (RCLED) is presented in this paper to further improve the photoelectric performance of the device. Modeling and 2D simulation have been proceeded with Crosslight APSYS[, the analysis and modeling software for semiconductor devices. Main results of the simulation are listed and discussed. The peak wavelength locates at about 550 nm with half-wave width of about 10 nm and its output power has been enhanced by 25% than the conventional one. The results prove that vertical RCLED is a considerable source for POF-based fiber communication.

  Info
Periodical
Chapter
Chapter 4: Mechatronics, Electronics, Control and Automation, Intelligent Systems
Edited by
Liangzhong Jiang
Pages
409-414
DOI
10.4028/www.scientific.net/AMM.389.409
Citation
K. Li, Z. Y. Guo, M. J. Li, M. J. Zhu, "Modeling of Vertical GaN Based Resonant Cavity Light-Emitting Diode", Applied Mechanics and Materials, Vol. 389, pp. 409-414, 2013
Online since
August 2013
Export
Price
$35.00
Share

In order to see related information, you need to Login.

In order to see related information, you need to Login.

Authors: Dorothea Werber, Martin Aigner, Gerhard Wachutka
Abstract:Two different optical measurement techniques have been combined in one single experimental platform to provide detailed insight into the...
1041
Authors: Mei Qiu Li, Meng Lan Duan, Yi Huang, Si Zhu Zhou
Structural Strength and Robustness
Abstract:The problem facing of spool used in high pressure wellhead is illustrated. The methods and steps of conventional design and autofrettage...
1405
Authors: Yu Guang Zhu, Xu Hua Shi, Xiong Yang, Li Xiang Shen
Chapter 4: Sensors, Measurement and Detection Technology
Abstract:A novel process-monitor multimodal optimization algorithm, called Pmdcopt-aiNet is given. It is based on biological immune network mechanism...
781