Ca2Si Crystal Grown Selectively by the Low Temperature Annealing

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The two groups of Ca films were directly and respectively deposited on Si(100) substrates by Radio Frequency (R.F.) magnetron sputtering system (MS) and subsequent were annealed at 600°C for 5h, 6h, 8h, 10h and 12h in a vacuum furnace. The structural and morphological features of the resultant films are tested by XRD, EDAX and FT-IR. The cubic phase Ca2Si film is grown selectively from Ca-Si system of the existence of multiple silicide phases by an interdiffusion reaction of solid phase between the deposited particles and clusters and substrate constituents. And, the structure of the deposited films, annealing temperature and annealing time are the principal factor for the selective growth.

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Periodical:

Edited by:

Ran Chen

Pages:

2583-2586

DOI:

10.4028/www.scientific.net/AMM.44-47.2583

Citation:

X. Z. Pan et al., "Ca2Si Crystal Grown Selectively by the Low Temperature Annealing", Applied Mechanics and Materials, Vols. 44-47, pp. 2583-2586, 2011

Online since:

December 2010

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$35.00

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