Blinking in Photoluminescence of InGaN Devices is Caused by Slow Beating of THz Vibrations of the Quantum Well


Article Preview

The photoluminescence from III-V wide band-gap semiconductors as InGaN is characterized by localized large intensity fluctuations, known as blinking, that, despite decades of research, is not yet completely understood. In structures where there is a three-dimensional confinement, as for example semiconductors nanocrystals, the phenomena is supposed to be related to temporary quenching due to highly efficient non-radiative recombination processes (for example, Auger). Nevertheless, in typical InGaN devices, the band structure is an infinitely wide quantum well, so the understanding of the blinking phenomenon remains elusive. We present experimental data and a model that suggests that the discussed optical fluctuations are a general phenomena caused by the slow beating between THz thermal vibrations of the Quantum Well. These minuscule displacements are occurring naturally all over the device, the displacements along the growth direction induce a modulation of the matrix elements that drives the optical emission process; this have measurable effect on the device photo-luminescence. In presence of impurities or gradient of concentration, the vibrations have locally slight frequency differences on adjacent domains, this give rise to a band of beats, and we observe the lower frequency tail of this band.



Edited by:

HJ. Patthi Bin Hussain, Zhu Yuesheng, Murthy Rallapalli and Jamaluddin Mahmud




R. Micheletto et al., "Blinking in Photoluminescence of InGaN Devices is Caused by Slow Beating of THz Vibrations of the Quantum Well", Applied Mechanics and Materials, Vols. 541-542, pp. 253-257, 2014

Online since:

March 2014




* - Corresponding Author

[1] S. Chuang and C. Chang: . Physical Review B 54, (1996) 2491–2504.

[2] S. Chuang and C. Chang: Applied Physics Letters 66, (1996) 1657–1659.

[3] J. H. Rice, et al. : Applied Physics Letters 84, (2004) 4110–4112.

[4] A. Das, et al. : Applied Physics Letters 98, (2011) 201911.

[5] S. R. Jian: Materials Chemistry and Physics 109, (2008) 360 – 364.

[6] J. Bai, T. Wang, and S. Sakai: Journal of Applied Physics 88, (2000) 4729–4733.

[7] E. Gotz, N. M. Johnson, D. P. Bour, M. D. McCluskey and E. E. Haller: Applied Physics Letters 69, (1996) 3725–3727.

[8] T. Deguchi, et al: Journal of Applied Physics 86, (1999) 1860–1867.

[9] R. Micheletto, N. Yoshimatsu, A. Kaneta, Y. Kawakami and S. Fujita: Applied Surface Science 229, (2004) 338–345.

[10] F. Hitzel, G. Klewer, S. Lahmann, U. Rossow, and A. Hangleiter: Phys. Rev. B 72, (2005) 081309.

[11] Y. Kawakami et al: Physica Status Solidi (b) 240, (2003) 337–343.

[12] A. Kaneta, M. Funato and Y. Kawakami: Phys. Rev. B 78, (2008) 125317.

[13] S. R. Jian, S. -R, T. H. Fang and D. S. Chuu: Applied Surface Science 252, (2006) 3033 – 3042.

Fetching data from Crossref.
This may take some time to load.