The Study of Electronic Structure and Optical Properties of 2H-SiC

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Electronic structure and optical properties of 2H-SiC are calculated by the first-principles calculation based on density functional theory, thus to give out the relation of electronic structure and optical properties of 2H-SiC material in theory. It is theoretically predicated that the 2H-SiC is an indirect band gap semiconductor with all valence band maximum located at Γ point in Brillouin zone and conduction band bottom located at M point of Brillouin zone. The optical property of the 2H-SiC for the band-to-band transition is analyzed by using the calculated band structure and density of state. The result of optical properties shows that obvious dielectric peaks appear in 0~10eV which absorb the band edge to correspond to the ultraviolet band. Therefore, 2H-SiC material maybe become the excellent ultraviolet semiconductor material.

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Edited by:

X.D. Xu, Bin Li, Q.M. Lu, X.Y. Yan and J.L. Li

Pages:

535-538

Citation:

F. C. Zhang et al., "The Study of Electronic Structure and Optical Properties of 2H-SiC", Applied Mechanics and Materials, Vols. 556-562, pp. 535-538, 2014

Online since:

May 2014

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$41.00

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[1] H. Matsunami: Micro. electron. Eng, Vol. 83(2006), p.2.

[2] J.Q. Liu, M. Skowronski, C. Hallin, et al: Appl. Phys. Lett. Vol. 80 (2002), p.749.

[3] C.L. Guo and C.L. Kuo: Sci. Bull., Vol. 41 (1996), p.1666.

[4] M.S. Miao, S. Limpijumnong and W. R. L. Lambrecht: Appl. Phys. Lett. Vol. 79 (2001), p.4360.

[5] T.L. Daulton, T.J. Bernatowicz, R.S. Lewis, et al: Science, Vol. 296 (2002), p.1852.

[6] C.R. Eddy and Jr.D.K. Gaskill: Science, Vol. 324 (2009), p.1398.

[7] P.N. First, T. Seyller, C. Berger, et al : Mrs. Bull. Vol. 35 (2010), p.296.

[8] P. Pasanen, M. Voutilainen, M. Helle, et al: Phys. Scr. Vol. 2012 (2012), p.014025.

[9] Y.H. Wu, T. Yu and Z. X Shen: J. Appl. Phys., Vol. 108 (2010), p.071301.

[10] Z.Y. Chen, T. Kimoto and H. Matsunami: Jpn. J. Appl. Phys., Vol. 38 (1999), p. L1375.

[11] H. Yano, T. Hirao, T. Kimoto, et al: Jpn. J. Appl. Phys., Vol. 39 (2000), pp.2-008.

[12] J. Takahashi and N. Ohtani, Phys. Status Solidi B Vol. 202, p.163 ~1997.

[13] C. Persson and U. Lindefelt: J. Appl. Phys., Vol. 82 (1997): p.5496.

[14] S. J. Clark, M. D. Segall, C. J. Pickard: Zeitschrift fuer Kristallographie, Vol. 220 (2005), p.567.

[15] R.F. Adamsky and K.M. Merz: Z. Kristallogr. Vol. 111 (1959), p.350.

[16] Landolt-Bornstein: Numerical Data and Functional Relationship in Science and Technology, new Series, Vol. 17, Springer Verlag, Berlin, (1982).