The Study of Electronic Structure and Optical Properties of 2H-SiC
Electronic structure and optical properties of 2H-SiC are calculated by the first-principles calculation based on density functional theory, thus to give out the relation of electronic structure and optical properties of 2H-SiC material in theory. It is theoretically predicated that the 2H-SiC is an indirect band gap semiconductor with all valence band maximum located at Γ point in Brillouin zone and conduction band bottom located at M point of Brillouin zone. The optical property of the 2H-SiC for the band-to-band transition is analyzed by using the calculated band structure and density of state. The result of optical properties shows that obvious dielectric peaks appear in 0~10eV which absorb the band edge to correspond to the ultraviolet band. Therefore, 2H-SiC material maybe become the excellent ultraviolet semiconductor material.
X.D. Xu, Bin Li, Q.M. Lu, X.Y. Yan and J.L. Li
F. C. Zhang et al., "The Study of Electronic Structure and Optical Properties of 2H-SiC", Applied Mechanics and Materials, Vols. 556-562, pp. 535-538, 2014