Low Temperature Sintering and Characterization of MgTiO3
The development of consumer electronics has meant that the component market is subjected of major economic issues. The economic battle goes through a search of lower manufacturing costs of electronic components together with an improvement in their performance, especially multilayer ceramic capacitors. The dielectric properties of the compound MgTiO3 (r 17, ε =100 ppm/°C, Tan (δ) <10-3) make this material a very good candidate for the manufacture of multilayer capacitors. In contrast, the high sintering temperature of this ceramic (1350 ° C), precludes the realization of multilayer capacitors with copper inner electrodes (T melting = 1083 ° C) less expensive than noble metals (Pd or Pt). Recent studies have shown that it is possible to reduce the sintering temperature by adding sintering agents. Additions made on MgTiO3 are glass phases (BBS 5Z2B, SBAZN, BBZS). Interesting dielectric properties were obtained in the case of system MgTiO3 + BBZS sintered at 1030 ° C: a dielectric permittivity epsilon r = 15.46, a temperature coefficient of 207 ppm / ° C, dielectric losses Tan (δ) <10-3.
M. Aliouat et al., "Low Temperature Sintering and Characterization of MgTiO3", Applied Mechanics and Materials, Vol. 61, pp. 95-99, 2011