Fluorine Doping Effects on the Electric Property of BiFeO3 Thin Films

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F doping BiFeO3-xFx (x=0, 0.02, 0.04, 0.06, 0.08) thin films were successfully fabricated on ITO/glass substrates by sol-gel method. X-ray diffraction analysis indicated that the un-doped BiFeO3 and F doping BiFeO3 thin films presented rhombohedral structure with the space group R3c. F-doping is found to significantly enhance the dielectric constant and decrease the leakage current density for x=0.08 compared with x=0. This study provides direct evidence that the multiferroic characteristics of BiFeO3 are sensitive to the anion doping, such as F, providing a convenient alternative to manipulate the electric polarization in multiferroic oxides.

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Edited by:

Li Qiang

Pages:

161-164

Citation:

F. L. Xu et al., "Fluorine Doping Effects on the Electric Property of BiFeO3 Thin Films", Applied Mechanics and Materials, Vol. 624, pp. 161-164, 2014

Online since:

August 2014

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