Fluorine Doping Effects on the Electric Property of BiFeO3 Thin Films
F doping BiFeO3-xFx (x=0, 0.02, 0.04, 0.06, 0.08) thin films were successfully fabricated on ITO/glass substrates by sol-gel method. X-ray diffraction analysis indicated that the un-doped BiFeO3 and F doping BiFeO3 thin films presented rhombohedral structure with the space group R3c. F-doping is found to significantly enhance the dielectric constant and decrease the leakage current density for x=0.08 compared with x=0. This study provides direct evidence that the multiferroic characteristics of BiFeO3 are sensitive to the anion doping, such as F, providing a convenient alternative to manipulate the electric polarization in multiferroic oxides.
F. L. Xu et al., "Fluorine Doping Effects on the Electric Property of BiFeO3 Thin Films", Applied Mechanics and Materials, Vol. 624, pp. 161-164, 2014