Recent Nanofabrication of Silicon Dioxide on Silicon Wafer Using AFM Operated at Low Temperature
Field-induced oxidation has become a promising process that is capable of directly producing high-resolution surface oxide patterns on variety materials. This report initiated the idea of the possibility of a controlled nanofabrication of SiO2 on silicon wafer by utilizing a frozen humid air film. A low temperature (-70°C) operation of an atomic force microscope (AFM) was used to condense ambient humidity (40%) to perform a thin frozen water layer covering a silicon wafer surface. A scanning probe was contacted with the layer and a zero bias voltage was applied to the sample surface with the AFM probe tip connected to the reference -2.44V. The frozen water film acted both as an electrolyte to form silicon dioxide and as a resource of hydroxide. Using this technique (a) a consistency in height of 6 nm silicon dioxide patterns layer could be achieved showing that the effect of tip vibration could be reduced; (b) easy to remove frozen water by just operating the AFM to the ambient temperature; (c) it is possible to control thickness by making different humidity.
Aimin Yang, Jingguo Qu and Xilong Qu
A. G. E. Sutjipto et al., "Recent Nanofabrication of Silicon Dioxide on Silicon Wafer Using AFM Operated at Low Temperature", Applied Mechanics and Materials, Vols. 84-85, pp. 317-320, 2011