The k·p Interaction Calculations of Conduction Band and Valence Band of InN Materials


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The k·p interaction of the conduction band and valence band of InN materials was calculated in this paper. The nonparabolicity of the conduction band is more pronounced, because the conduction band feels stronger perturbation from the valence bands when Eg is smaller or EP is larger. The increase in absorption edge with increasing electron concentration was calculated by the dispersion relation. In the calculation, the conduction band renormalization effects due to electron interaction and electron-ionized impurity interaction are also taken into account. A good consistent picture is established in describing the conduction band of InN based on the k·p interaction.



Edited by:

Z.S. Liu, L.P. Xu, X.D. Liang, Z.H. Wang and H.M. Zhang




S. G. Dong et al., "The k·p Interaction Calculations of Conduction Band and Valence Band of InN Materials", Advanced Materials Research, Vol. 1015, pp. 235-239, 2014

Online since:

August 2014




* - Corresponding Author

[1] K.L. Westra, M.J. Brett. Near IR optical properties of sputtered InN films [J]. Thin Solid Films. 1990: 192: 227-234.

[2] T. Yamaguchi, M. Kurouchi, H. Naoi, et al. Growth of high-quality InN films by insertion of high-temperature InN buffer layer [J]. Journal of Crystal Growth. 2005: 275: 1321-1326.

[3] J. Wu, W. Walukiewicz, K.M. Yu, et al. Universal bandgap bowing in group-III nitride alloys [J]. Solid State Communications. 2003: 127: 411-414.

[4] J. Wu, W. Walukiewicz. Band gaps of InN and group III nitride alloys [J]. Superlattices and Microstructures. 2003: 34: 63-75.

[5] R. Braunstein, E.O. Kane. The valence band structure of the III–V compounds [J]. Journal of Physics and Chemistry of Solids. 1962: 23: 1423-1431.


[6] P. Y. Yu, M. Cardona. Fundamentals of Semiconductors: Physics and Materials Properties [C]. Berlin: Springer-Verlag, (1999).

[7] Patrick Rinke, M. Winkelnkemper, A. Qteish, et al. Consistent set of band parameters for the group-III nitrides AlN, GaN, and InN [J]. Physical Review B. 2008: 77: 075202.

[8] J. Wu, W. Walukiewicz, S. X. Li, et al. Effects of electron concentration on the optical absorption edge of InN [J]. Applied Physics Letters. 2004: 84: 2805.

[9] B. Arnaudov, T. Paskova, P. P. Paskov, et al. Energy position of near-band-edge emission spectra of InN epitaxial layers with different doping levels [J]. Physical Review B. 2004: 69: 115216.


[10] J. Wu, W. Walukiewicz, K. M. Yu, et al. Superior radiation resistance of In1−xGaxN alloys: Full-solar-spectrum photovoltaic material system [J]. Journal of Applied Physics. 2003: 94: 6477.


[11] T. Inushima, M. Higashiwaki, T. Matsui. Optical properties of Si-doped InN grown on sapphire (0001) [J]. Physical Review B. 2003: 68: 235204.


[12] A. Kasic, M. Schubert, Y. Saito, et al. Effective electron mass and phonon modes in n-type hexagonal InN [J]. Physical Review B. 2002: 65: 115206.


[13] S. P. Fu, Y. F. Chen. Effective mass of InN epilayers [J]. Applied Physics Letters. 2004: 85: 1523.

[14] T. Inushima, T. Shiraishi, V.Y. Davydov. Phonon structure of InN grown by atomic layer epitaxy [J]. Solid State Communication. 1999: 110: 491-495.


[15] I. Gorczyca, J. Plesiewicz, L. Dmowski, et al. Electronic structure and effective masses of InN under pressure [J]. Journal of Applied Physics. 2008: 104: 013704.


[16] Yuichi Sato, Susumu Sato. Influence of growth rates on properties of InN thin films [J]. Journal of Crystal Growth. 1995: 146: 262-265.