Anisotropic Lapping of Single Crystal Sapphire

Abstract:

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Lapping processes of single crystal sapphire are investigated in relation to crystallo- graphic orientation, the influence of the crystal anisotropism under different lapping liquid concentration, loading forces on materials removal rate and roughness in sapphire lapping is discussed. C-plane(0001),M-plane ( ),R-plane ( ),A-plane ( ) sapphire wafers were used for lapping experiments, experimental results show that Surface roughness is depend on the fracture toughness, surface orientation with higher fracture toughness such as C-plane would get better roughness during lapping, material removal rate of R-plane is the lowest in four planes, it is for elastic modulus and fracture toughness of R-plane are less than other three planes.

Info:

Periodical:

Advanced Materials Research (Volumes 102-104)

Edited by:

Guozhong Chai, Congda Lu and Donghui Wen

Pages:

502-505

DOI:

10.4028/www.scientific.net/AMR.102-104.502

Citation:

P. Zhou et al., "Anisotropic Lapping of Single Crystal Sapphire", Advanced Materials Research, Vols. 102-104, pp. 502-505, 2010

Online since:

March 2010

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Price:

$35.00

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