Anisotropic Lapping of Single Crystal Sapphire
Lapping processes of single crystal sapphire are investigated in relation to crystallo- graphic orientation, the influence of the crystal anisotropism under different lapping liquid concentration, loading forces on materials removal rate and roughness in sapphire lapping is discussed. C-plane(0001),M-plane ( ),R-plane ( ),A-plane ( ) sapphire wafers were used for lapping experiments, experimental results show that Surface roughness is depend on the fracture toughness, surface orientation with higher fracture toughness such as C-plane would get better roughness during lapping, material removal rate of R-plane is the lowest in four planes, it is for elastic modulus and fracture toughness of R-plane are less than other three planes.
Guozhong Chai, Congda Lu and Donghui Wen
P. Zhou et al., "Anisotropic Lapping of Single Crystal Sapphire", Advanced Materials Research, Vols. 102-104, pp. 502-505, 2010