A Novel PNIN Barrier Controlled Tunnel FET

Abstract:

Article Preview

A novel structure of barrier controlled tunnel FET is proposed in the paper. The principles of gate work function engineering and channel doping engineering are combined to form up an in channel potential barrier, which can tune the source to drain tunnel current. The proposed structure serves as an alternative solution of barrier controlled tunnel FET fabrication, which combines the merits of the barrier controlled traditional MOSFET device and the bandgap controlled tunnel device. With carbon nanotube as the channel material, the device performance of the novel structure is verified using numerical simulation under the non-equilibrium Green’s function framework.

Info:

Periodical:

Edited by:

Zou Jianxin

Pages:

497-502

Citation:

H. Wang et al., "A Novel PNIN Barrier Controlled Tunnel FET", Advanced Materials Research, Vol. 1096, pp. 497-502, 2015

Online since:

April 2015

Export:

Price:

$41.00

* - Corresponding Author

[1] J. Appenzeller, Y. M. Lin, J. Knoch, and P. Avouris, Band-to-Band Tunneling in Carbon Nanotube Field-Effect Transistors, Physical Review Letters, vol. 93, p.196805, (2004).

DOI: https://doi.org/10.1103/physrevlett.93.196805

[2] D. E. Nikonov, I. A. Young, Overview of Beyond-CMOS Devices and a Uniform Methodology for Their Benchmarking, Proceedings of the IEEE, vol. 101, pp.2498-2533, (2013).

DOI: https://doi.org/10.1109/jproc.2013.2252317

[3] V. Nagavarapu, R. Jhaveri, and J. C. S. Woo, The Tunnel Source (PNPN) n-MOSFET: A Novel High Performance Transistor, Electron Devices, IEEE Transactions on, vol. 55, pp.1013-1019, (2008).

DOI: https://doi.org/10.1109/ted.2008.916711

[4] S. Saurabh, M. J. Kumar, Novel Attributes of a Dual Material Gate Nanoscale Tunnel Field-Effect Transistor, Electron Devices, IEEE Transactions on, vol. 58, pp.404-410, (2011).

DOI: https://doi.org/10.1109/ted.2010.2093142

[5] H. Wang, S. Chang, Y. Hu, H. He, J. He, Q. Huang, et al., A Novel Barrier Controlled Tunnel FET, Electron Device Letters, IEEE, vol. 35, pp.798-800, (2014).

[6] H. Wang, G. Wang, S. Chang, and Q. Huang, High-Order Element Effects of the Green's Function in Quantum Transport Simulation of Nanoscale Devices, Electron Devices, IEEE Transactions on, vol. 56, pp.3106-3114, (2009).

DOI: https://doi.org/10.1109/ted.2009.2033006

[7] G. Fiori, G. Iannaccone, and G. Klimeck, A three-dimensional simulation study of the performance of carbon nanotube field-effect transistors with doped reservoirs and realistic geometry, Electron Devices, IEEE Transactions on, vol. 53, pp.1782-1788, (2006).

DOI: https://doi.org/10.1109/ted.2006.878018

[8] G. Fiori, G. Iannaccone, NanoTCAD ViDES, http: /vides. nanotcad. com/vides/ [Online].

[9] H. Wang, S. Chang, C. Wang, Y. Hu, H. He, J. He, et al., The effects of elliptical gate cross section on carbon nanotube gate-all-around field effect transistor, in Quality Electronic Design (ASQED), 2013 5th Asia Symposium on, 2013, pp.274-277.

DOI: https://doi.org/10.1109/asqed.2013.6643599