We investigated the magneto-electric properties and electric properties of Cr2O3 thin films. Cr2O3 thin films were prepared on a thermal-oxidized Si substrate and a c-Al2O3 substrate. The sample prepared on the thermal-oxidized Si substrate had poly-crystalline structure. On the other hand, the sample prepared on the c-Al2O3 substrate has preferentially (006) oriented structure. Both samples had high enough resistivity to get a high induced magnetic moment. The induced magnetic moment by applying external voltage was observed on the oriented sample, although there was no induced magnetic moment on the same voltage for the poly-crystalline sample. This difference may be due to the random distribution of crystal and the leakage current caused by the Pool-Frenkel type defect in the poly-crystalline film.