Effects of Indium Incorporation on the Optical Properties of ZnO Films

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Transparent indium-doped ZnO (IZO) films with low In content (<6at%) were fabricated through radio-frequency (rf) helicon magnetron sputtering. Formation of In-Zn-O solid solution was confirmed by X-ray diffraction (XRD) patterns. Incorporation of indium into ZnO films enhances the optical transmission in the visible wavelength. The optical band-gaps slightly increase from 3.25eV (ZnO) to 3.28eV (In0.04Zn0.96O) and to 3.30eV (In0.06Zn0.94O) due to Burstain-Moss effect. The Urbach tail parameter E0, which is believed to be a function of structural disorder, increases from 79meV (ZnO), to 146meV (In0.04Zn0.96O), and to 173meV (In0.06Zn0.94O), which is consistent with increase of Full-Width Half-Maximum (FWHM) in corresponding XRD patterns. Decreasing in crystal quality with increasing indium concentration is also confirmed by photoluminescence spectra.

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Periodical:

Advanced Materials Research (Volumes 11-12)

Main Theme:

Edited by:

Masayuki Nogami, Riguang Jin, Toshihiro Kasuga and Wantai Yang

Pages:

159-162

DOI:

10.4028/www.scientific.net/AMR.11-12.159

Citation:

Y. G. Cao et al., "Effects of Indium Incorporation on the Optical Properties of ZnO Films", Advanced Materials Research, Vols. 11-12, pp. 159-162, 2006

Online since:

February 2006

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$35.00

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