SiCOI Structure Fabricated by Hot-Mesh Chemical Vapor Deposition
The growth of 3C-SiC on thermal oxide layer of Si (SiO2) was investigated by hot-mesh (HM) chemical vapor deposition (CVD), which utilizes hot tungsten (W) wires of a mesh structure as a catalyzer. The SiC films were characterized by Fourier transform infrared spectroscopy (FT-IR), X-ray diffraction (XRD) and cross sectional transmission electron microscopy (TEM). From the XRD spectra of SiC films grown on SiO2 layer, (100) oriented SiC films were grown at the substrate temperatures of 750-800°C and the mesh temperature of 1600°C, while polycrystalline SiC films were grown at the substrate temperature above 900°C. From the data of FT-IR, TEM and the growth rate, the growth characteristics of SiC crystal by HMCVD were discussed.
Masayuki Nogami, Riguang Jin, Toshihiro Kasuga and Wantai Yang
K. Yasui, T. Kurimoto, M. Takata, T. Akahane, "SiCOI Structure Fabricated by Hot-Mesh Chemical Vapor Deposition", Advanced Materials Research, Vols. 11-12, pp. 257-260, 2006