SiCOI Structure Fabricated by Hot-Mesh Chemical Vapor Deposition

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The growth of 3C-SiC on thermal oxide layer of Si (SiO2) was investigated by hot-mesh (HM) chemical vapor deposition (CVD), which utilizes hot tungsten (W) wires of a mesh structure as a catalyzer. The SiC films were characterized by Fourier transform infrared spectroscopy (FT-IR), X-ray diffraction (XRD) and cross sectional transmission electron microscopy (TEM). From the XRD spectra of SiC films grown on SiO2 layer, (100) oriented SiC films were grown at the substrate temperatures of 750-800°C and the mesh temperature of 1600°C, while polycrystalline SiC films were grown at the substrate temperature above 900°C. From the data of FT-IR, TEM and the growth rate, the growth characteristics of SiC crystal by HMCVD were discussed.

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Periodical:

Advanced Materials Research (Volumes 11-12)

Main Theme:

Edited by:

Masayuki Nogami, Riguang Jin, Toshihiro Kasuga and Wantai Yang

Pages:

257-260

DOI:

10.4028/www.scientific.net/AMR.11-12.257

Citation:

K. Yasui et al., "SiCOI Structure Fabricated by Hot-Mesh Chemical Vapor Deposition", Advanced Materials Research, Vols. 11-12, pp. 257-260, 2006

Online since:

February 2006

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Price:

$35.00

[1] M. Mehregany and C.A. Zorman, N. Rajan and C.H. Wu: Proc. IEEE Vol. 86 (1998), p.1594.

[2] P.M. Sarro: Sens. Actuators Vol. 82 (2000), p.210.

[3] Q.Y. Tang, U. Gosele, C. Yuan, A.J. Steckl and M. Reiche: J. Elctrochem. Soc. Vol. 142 (1995), p.232.

[4] C. Serre, A.R. Rodriguez, A.P. Rodriguez, J.R. Morante, L. Fonseca, M.C. Acero, R. Kogler and W. Skorupa: Sens. Actuators Vol. 74 (1999), p.169.

[5] C.H. Wu, C.A. Zorman and M. Mehregany: Mater. Sci. Forum Vol. 338-342 (2000), p.541.

[6] Y. Onuma, R. Okada, H. Ono and K. Kamimura: Proc. Int. Conf. SiC and Related Materials, Washington DC, USA (1993), p.133.

[7] K. Yasui, K. Asada, T. Maeda and T. Akahane: Appl. Surf. Sci. Vol. 175-176 (2001), p.495.

[8] K. Yasui, K. Morimoto, M. Takata and T. Akahane: Abst. 12th Int. Conf. Solid Films & Surfaces, Hamamatsu, Japan (2004), p.80.

[9] K. Yasui, J. Eto, Y. Narita, M. Takata and T. Akahane: Jpn. J. Appl. Phys. Vol. 44 (2005), p.1361.

[10] J.S. Shor, D. Goldstein and A.D. Kurtz: IEEE Trans. Electron Devices Vol. 40 (1993), p.1093.

[11] S. Miyajima, A. Yamada and M. Konagai: Tech. Dig. 14th Int. Photovoltaic Science and Engineering Conf., Bangkok (2004), p.367.

[12] Q. Zhao, J.C. Li, H. Wang, B. Wang and H. Yan: J. Cryst. Growth Vol. 260 (2004), p.176.

[13] Y. Ohshita: J. Electrochem. Soc. Vol. 142 (1995), p.1002.

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