Synthesis and Gas-Sensing Character of SnOx Cluster-Assembled Films


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Nanometric SnOx cluster-assembled films prepared by a plasma-gas-condensation cluster deposition apparatus have been examined by transmission electron microscopy (TEM) and electrical resistance. TEM observation showed that those clusters were almost spherical and size-monodispersive with a mean cluster size of 10 nm. The high-resolution TEM images indicated that the films were composed of randomly oriented nanocrystallites and that their surface roughness retained the traces of the original SnOx clusters. The electrical resistance of the SnOx cluster-assembled film decreased with decreasing partial O2 gas pressure. This result suggests that the intergranular potential barriers were responsible for the resisitvity variation. The activation energy estimated from the temperature-dependent resistivity was 0.75 eV for 330 K < T < 410 K under the partial O2 gas pressure of 0.02 MPa.



Advanced Materials Research (Volumes 11-12)

Main Theme:

Edited by:

Masayuki Nogami, Riguang Jin, Toshihiro Kasuga and Wantai Yang






T. Hihara et al., "Synthesis and Gas-Sensing Character of SnOx Cluster-Assembled Films", Advanced Materials Research, Vols. 11-12, pp. 599-602, 2006

Online since:

February 2006




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