Angle Dependent Sputtering and Dimer Formation from Vanadium Nitride Target by Ar+ Ion Bombardment
A compact angle-resolved secondary ion mass spectrometer (AR-SIMS) with a special geometrical configuration, composing of a differentially pumped micro-beam ion-gun, a tiltable sample stage and a time-of-flight (TOF) mass spectrometer was applied to measure angular distribution (AD) of secondary ions ejected from VN by oblique 3 keV Ar+ sputtering at room temperature. AD of V+ was almost identical with that of N+, strongly suggesting that Gibbsian segregation did not take place during sputtering. Since the angular dependence of VN+/V+ and V2 +/V+ intensity ratios was independent of that of N+ and V+ intensities, VN+ and V2 + dimer ions were generated via the “as such” direct emission process.
Masayuki Nogami, Riguang Jin, Toshihiro Kasuga and Wantai Yang
S. Kawaguchi et al., "Angle Dependent Sputtering and Dimer Formation from Vanadium Nitride Target by Ar+ Ion Bombardment", Advanced Materials Research, Vols. 11-12, pp. 607-610, 2006