Angle Dependent Sputtering and Dimer Formation from Vanadium Nitride Target by Ar+ Ion Bombardment

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A compact angle-resolved secondary ion mass spectrometer (AR-SIMS) with a special geometrical configuration, composing of a differentially pumped micro-beam ion-gun, a tiltable sample stage and a time-of-flight (TOF) mass spectrometer was applied to measure angular distribution (AD) of secondary ions ejected from VN by oblique 3 keV Ar+ sputtering at room temperature. AD of V+ was almost identical with that of N+, strongly suggesting that Gibbsian segregation did not take place during sputtering. Since the angular dependence of VN+/V+ and V2 +/V+ intensity ratios was independent of that of N+ and V+ intensities, VN+ and V2 + dimer ions were generated via the “as such” direct emission process.

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Periodical:

Advanced Materials Research (Volumes 11-12)

Main Theme:

Edited by:

Masayuki Nogami, Riguang Jin, Toshihiro Kasuga and Wantai Yang

Pages:

607-610

DOI:

10.4028/www.scientific.net/AMR.11-12.607

Citation:

S. Kawaguchi et al., "Angle Dependent Sputtering and Dimer Formation from Vanadium Nitride Target by Ar+ Ion Bombardment", Advanced Materials Research, Vols. 11-12, pp. 607-610, 2006

Online since:

February 2006

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$35.00

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