Structural and Electronic Properties of Hydrogen-Passivated Silicon Quantum Dots: Density Functional Calculations

Abstract:

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Density functional theory (DFT) by numerical basis-set calculations of silicon quantum dots (Si-QDs) passivated by hydrogen, ranging in size up to 1.9 nm are presented. These DFT computation results are used to examine and deduce the properties of 14 spherical Si-QDs including its density of state (DOS), and energy gap from the HOMO-LUMO results. The atomistic model of each silicon QDs was constructed by repeating crystal unit cell of face-centered cubic (FCC) structure, then the QDs surface was passivated by hydrogen atoms. The model was relaxed and optimized using Quasi-Newton method for each size of Si-QDs to get an ideal structure. Exchange-correlation potential (Vxc) of electrons were approximated in this system using the Local Density Approximation (LDA) functional and Perdew-Zunger (PZ) functional. Finally, all results were compared with previous experimental data and other similar theoretical approaches, and these results augured well

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Periodical:

Edited by:

Jedol Dayou, Azhan Hashim, Walter Charles Primus, Fuei Pien Chee, Mohamad Deraman and Roslan Abd-Shukor

Pages:

571-576

DOI:

10.4028/www.scientific.net/AMR.1107.571

Citation:

M. M.-'ab Anas, A. P. Othman, G. Gopir, "Structural and Electronic Properties of Hydrogen-Passivated Silicon Quantum Dots: Density Functional Calculations", Advanced Materials Research, Vol. 1107, pp. 571-576, 2015

Online since:

June 2015

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$35.00

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