Effect of Dopant Concentration on Electrical and Optical Properties of Sn-Doped ZnO Thin Films Deposited by Sol-Gel Immersion Method

Abstract:

Tin-doped Zinc Oxide (Sn-doped ZnO) thin films were prepared using zinc acetate dehydrate as a starting material by sol-gel immersion method. The doping concentrations were varied at 0 at.%, 0.5 at.%, 1.0 at.%, 2.0 at.%, 3.0 at.% and 4.0 at.%. The synthesized samples were characterized by current-voltage (I-V) measurement and UV-VISS spectrometer.

• Periodical: Advanced Materials Research (Volume 1109)
• Pages: 549-553
• DOI: https://doi.org/10.4028/www.scientific.net/AMR.1109.549
• Online since: June 2015
• Authors: Shafura Karim*, Uzer Mohd Noor, Mohamad Hafiz Mamat, Ahmad Shuhaimi Abu Bakar, Salman A.H. Alrokayan, Haseeb A. Khan, Mohamad Rusop
• Keywords: Electrical Properties, Optical Properties, Sn Concentration, Zinc Oxide

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