Deposition of IGZO or ITZO Thin Films by Co-Sputtering of IZO and GZO or ITO Targets
New transparent conducting oxide (TCO) materials, indium-gallium-zinc-oxide (IGZO) and indium-tin-zinc-oxide (ITZO) were deposited on glass substrate by DC co-sputtering using IZO-GZO and IZO-ITO target combinations, respectively. Amorphous indium-gallium-zinc-oxide (a-IGZO) films possessing electron mobility of as high as 12 cm2V-1s-1 and resistivity of 0.15Ω・cm could be deposited. Hall mobility was ten times higher than that of amorphous silicon (a-Si), and comparable to that of commercial IGZO thin films. A good electrical resistivity of 0.17Ω・cm with a relatively high mobility of 10 cm2V-1s-1 was found for the ITZO films. These values were similar to those observed for the IGZO films in the present study.
X. Z. Wang et al., "Deposition of IGZO or ITZO Thin Films by Co-Sputtering of IZO and GZO or ITO Targets", Advanced Materials Research, Vol. 1110, pp. 197-202, 2015