Increase of Photoelectric Response of Ge Nanocones Formed on SiGe by Laser Radiation


Article Preview

Irradiation of SiGe-on-Si structures by pulsed Nd:YAG laser with intensities 1.0 MW/cm2 leads to the formation of Ge nanocones. As a result increases the surface photovoltage (SPV) signal up to 10 times. The SPV decays do not speed up with the radiation, thus indicating that the laser treatments do not cause an increase in the concentration of recombination centers at interfaces. Therefore the fabrication technique proposes here may be considered to be an effective approach of producing cost-competitive photosensors based on SiGe/Si.



Edited by:

Arturs Medvids




A. Gorb et al., "Increase of Photoelectric Response of Ge Nanocones Formed on SiGe by Laser Radiation", Advanced Materials Research, Vol. 1117, pp. 23-25, 2015

Online since:

July 2015




* - Corresponding Author

[1] A. A. Shklyaev, O. A. Shegai, Y. Nakamura, M. Ichikawa, Impact ionization of excitons in Ge/Si structures with Ge quantum dots grown on the oxidized Si(100) surfaces, J. Appl. Phys. 115 (2014) 203702.

DOI: 10.1063/1.4875101

[2] A. Medvid, P. Onufrijevs, A. Mychko, Properties of nanocones formed on a surface of semiconductors by laser radiation: quantum confinement effect of electrons, phonons, and excitons, Nanoscale Res. Lett. 6 (2011) 582–588.

DOI: 10.1186/1556-276x-6-582

Fetching data from Crossref.
This may take some time to load.