The Electrical Characteristics of GaAs-MgO Interfaces of GaAs MIS Schottky Diodes
Many researches pay attention to the metal-semiconductor interface barrier, due to its effect on device. Deliberate growing an interface layer to affect and improve the quality of device, especially metal-insulator-semiconductor (MIS) structures, arouses wide attention. In this paper, Be-doped GaAs was grown on substrate wafer by molecular beam epitaxy (MBE) on purpose before depositing insulator layer, and then MgO film as the dielectric interface layer of Au/GaAs were deposited using atomic layer deposition (ALD) method. The interface electrical characteristics of the metal-insulator-semiconductor (MIS) structures were investigated in detail. The barrier height and ideal factor of GaAs diode parameters were calculated by means of current-voltage (I-V) characteristics. Experimental result showed that along with the increasing of the doping content, the Schottky barrier height increasing, but the ideal factor decrease at first and then increase.
Hailin Cong, Bing Yu and Xing Lu
X. Gao et al., "The Electrical Characteristics of GaAs-MgO Interfaces of GaAs MIS Schottky Diodes", Advanced Materials Research, Vol. 1118, pp. 270-275, 2015