Spin Dephasing in Organic Semiconductor Spintronic Devices

Abstract:

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Spin dephasing in organic semiconductor was studied based on spin drift-diffusion model in various electric field. It is found that in the ohmic regime, spin dephasing is determined by the voltage bias. With increase of the voltage bias, spin coherence increases. And the increasing voltage bias can enhance the magnitude of the spin dephasing oscillations at a static perpendicular maganetic field. It shows that the current density in total device output can be modulated by an electrostatic field via controlled precession.

Info:

Periodical:

Advanced Materials Research (Volumes 113-116)

Edited by:

Zhenyu Du and X.B Sun

Pages:

1904-1907

DOI:

10.4028/www.scientific.net/AMR.113-116.1904

Citation:

Y. L. Mi and X. Y. Tie, "Spin Dephasing in Organic Semiconductor Spintronic Devices", Advanced Materials Research, Vols. 113-116, pp. 1904-1907, 2010

Online since:

June 2010

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Price:

$35.00

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