Study of Structural Properties of N-Doped ZnO Thin Film Prepared by Reactive Gas-Timing RF Magnetron Sputtering

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We examined structural properties of nitrogen doped (ZnO:N) thin films prepared by reactive RF magnetron sputtering technique in conjunction with gas timing method. The deposited films were polycrystalline ZnO in wurtzite structure. Morphology of the ZnO:N films could be modified by adjusting gas timing conditions. The x-ray photoelectron spectroscopy (XPS) and extended x-ray absorption fine structure (EXAFS) analysis showed that incorporation of nitrogen may cause structural distortion in the ZnO:N crystal.

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Edited by:

Toemsak Srikhirin, Teerakiat Kerdcharoen and Tanakorn Osotchan

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8-11

Citation:

T. Boonkoom et al., "Study of Structural Properties of N-Doped ZnO Thin Film Prepared by Reactive Gas-Timing RF Magnetron Sputtering", Advanced Materials Research, Vol. 1131, pp. 8-11, 2016

Online since:

December 2015

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$41.00

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