Study of Structural Properties of N-Doped ZnO Thin Film Prepared by Reactive Gas-Timing RF Magnetron Sputtering
We examined structural properties of nitrogen doped (ZnO:N) thin films prepared by reactive RF magnetron sputtering technique in conjunction with gas timing method. The deposited films were polycrystalline ZnO in wurtzite structure. Morphology of the ZnO:N films could be modified by adjusting gas timing conditions. The x-ray photoelectron spectroscopy (XPS) and extended x-ray absorption fine structure (EXAFS) analysis showed that incorporation of nitrogen may cause structural distortion in the ZnO:N crystal.
Toemsak Srikhirin, Teerakiat Kerdcharoen and Tanakorn Osotchan
T. Boonkoom et al., "Study of Structural Properties of N-Doped ZnO Thin Film Prepared by Reactive Gas-Timing RF Magnetron Sputtering", Advanced Materials Research, Vol. 1131, pp. 8-11, 2016