Study of Raman Spectrum of Fe Doped CeO2 Thin Films Grown by Pulsed Laser Deposition

Abstract:

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Ce1-xFexO2 (x=0, 0.01, 0.03 and 0.0 5) thin films were grown by pulsed laser deposition technique on Si and LaAlO3 (LAO) substrates. These films were deposited in vacuum and 200 mTorr oxygen partial pressure for both the substrates. These films were characterized by x-ray diffraction XRD and Raman spectroscopy measurements. XRD results reveal that these films are single phase. Raman results show F2g mode at ~466 cm-1 and defect peak at 489 cm-1 for film that deposited on LAO substrates, full width at half maximum (FWHM) is increasing with Fe doping for films deposited on both the substrates.

Info:

Periodical:

Advanced Materials Research (Volumes 123-125)

Edited by:

Joong Hee Lee

Pages:

375-378

DOI:

10.4028/www.scientific.net/AMR.123-125.375

Citation:

R. Prakash et al., "Study of Raman Spectrum of Fe Doped CeO2 Thin Films Grown by Pulsed Laser Deposition", Advanced Materials Research, Vols. 123-125, pp. 375-378, 2010

Online since:

August 2010

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$35.00

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