Wafer Polishing Process with Signal Analysis and Monitoring for Optimum Condition of Machining


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The polishing process of a silicon wafer is a critical factor in the fabrication of semiconductor. Because a globally planar and mirror-like wafer surface are achieved in this process. The surface roughness in the wafer depends on the surface properties of the carrier head unit along with other machining conditions such as working velocity, polishing pad, temperature, down-force, etc. In this paper, the wafer surface is investigated according to several parameters and experimental data. Experiments were performed to observe the down-force and temperature when the wafer carrier head unit was pressed down onto the polishing pad. A loadcell was employed to obtain the signal of the applied pressure against the polishing pad. Also, working temperature was detected using an infrared sensor. To study on the optimum conditions of machining, monitoring system is coded in Ch and the results of experiment present data using Ch.



Advanced Materials Research (Volumes 126-128)

Edited by:

Yunn-Shiuan Liao, Chao-Chang A. Chen, Choung-Lii Chao and Pei-Lum Tso






J. T. Lee et al., "Wafer Polishing Process with Signal Analysis and Monitoring for Optimum Condition of Machining", Advanced Materials Research, Vols. 126-128, pp. 295-304, 2010

Online since:

August 2010




[1] B. Jovanovic, Moore's Law and Learning by Doing, Review of Economic Dynamic, vol. 5(2002), pp.346-375.

[2] Z.J. Pei, A. Strasbaugh, Fine grinding of silicon wafers, International Journal of Machine Tools & Manufacture, vol. 41(2001), pp.659-672.

DOI: 10.1016/s0890-6955(00)00101-2

[3] S.C. Kim, E.S. Lee, N.H. Kim, H.D. Jeong, Machining characteristics on the ultra-precision dicing of silicon wafer, International Journal of Advanced Manufacturing Technology, vol. 33(2007), pp.662-667.

DOI: 10.1007/s00170-006-0499-1

[4] Z.J. Pei, A study on surface grinding of 300 mm silicon wafers, International Journal of Machine Tools & Manufacture, vol. 42(2002), pp.385-393.

DOI: 10.1016/s0890-6955(01)00122-5

[5] M. Kulkarni, A. Desai, Silicon wafering process flow, US Patent 6, 294, 469(2001).

[6] R. Vandamme, Y. Xin, Z.J. Pei, Method of processing semiconductor wafers, US Patent 6, 114, 245(2000).

[7] J.K. Won, J.H. Lee, J.T. Lee, E.S. Lee, The selection on the optimal condition of Si-wafer final polishing by combined Taguchi method and respond surface method, Transactions of Korean Society of Machine Tool Engineers, vol. 17(2008), pp.21-28.

[8] Y.J. Shin, E. S. Lee, J. H. Kang, Identification of the Mechanical Aspects of Material Removal Mechanisms in CMP, Journal of the Korean society of machine tool engineering, vol. 9(2000), pp.7-12.

[9] D.H. Kwon, H.J. Kim, H.D. Jeong, A study on the decay of friction force during CMP, Journal of the Korean Society of precision engineering(2002), pp.972-975.

[10] H.J. Kim, H.Y. Kim, H.D. Jeong, E.S. Lee, Y.J. Shin, Friction and thermal phenomena in chemical mechanical polishing, Journal of Materials Processing Technology, vol. 130-131(2002), pp.334-338.

DOI: 10.1016/s0924-0136(02)00820-8

[11] John McGrath, Chris Davis, Polishing pad surface characterisation in chemical mechanical planarisation, Journal of Materials Processing Technology, vol. 153-154( 2004), pp.666-673.

DOI: 10.1016/j.jmatprotec.2004.04.094

[12] Stephen S. Nestinger and Harry H. Cheng, Interactive motion control using Ch - an embeddable C/C++ interpreter, Assembly Automation, vol. 24( 2004), pp.152-158.

DOI: 10.1108/01445150410529928

[13] Harry H. Cheng, Dung T. Trang, Web-Based Interactive Analysis and Animation of Mechanisms, Journal of Computing and Information Science in Engineering, vol. 6, pp.84-90.

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