Chemical Mechanical Polishing(CMP) is currently the most effective planarization method used in the semiconductor industry. Because of the continuous improvement of the wafer size and line width, the CMP process must be promoted and improved. Many studies have been undertaken to try and achieve both a high material remval rate (MRR) while maintaing a high surface quality of silicon wafer, however up until this point it appears that the two objectives are mutually exclusive. In this paper, an innovative method which integrated ultrasonic vibration assisted machining and CMP (UCMP) has been developed. With the use of ultrasonic vibration, the CMP efficiency and the quality of ploished suface improves considerably as shown in this paper. The basic principle effects of ultrasonic vibration are further illustrated and the experiments had been done to demostrate the proper procedure. The results showed that UCMP achieves a higher material removal rate (MRR) and better surface quality at the same time.