Field Emission of Aluminum Nitride Nanocones Deposited on Titanium Substrate

Abstract:

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We report the preparation of quasi-arrays of aluminum nitride nanocones via chemical vapor deposition on nitriding treated titanium substrate at 800 °C through the reaction between AlCl3 vapor and NH3/N2 gas. The field emission measurement exhibits a fine electron emission with the turn-on field of 10.7 V/mm, which is quite smaller than the turn-on field of 41.3 V/μm for aluminum nitride nanocones deposited on silicon wafer in our previous works. The reduction of turn-on field is attributed to the formation of a layer of conductive tiannium nitride on titanium substrate during the nitriding treatment.

Info:

Periodical:

Advanced Materials Research (Volumes 129-131)

Edited by:

Xie Yi and Li Mi

Pages:

476-481

DOI:

10.4028/www.scientific.net/AMR.129-131.476

Citation:

Y. M. Hu et al., "Field Emission of Aluminum Nitride Nanocones Deposited on Titanium Substrate", Advanced Materials Research, Vols. 129-131, pp. 476-481, 2010

Online since:

August 2010

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Price:

$35.00

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