Field Emission of Aluminum Nitride Nanocones Deposited on Titanium Substrate
We report the preparation of quasi-arrays of aluminum nitride nanocones via chemical vapor deposition on nitriding treated titanium substrate at 800 °C through the reaction between AlCl3 vapor and NH3/N2 gas. The field emission measurement exhibits a fine electron emission with the turn-on field of 10.7 V/mm, which is quite smaller than the turn-on field of 41.3 V/μm for aluminum nitride nanocones deposited on silicon wafer in our previous works. The reduction of turn-on field is attributed to the formation of a layer of conductive tiannium nitride on titanium substrate during the nitriding treatment.
Xie Yi and Li Mi
Y. M. Hu et al., "Field Emission of Aluminum Nitride Nanocones Deposited on Titanium Substrate", Advanced Materials Research, Vols. 129-131, pp. 476-481, 2010