Study on Optimization of CMP Slurry for Tantalum in ULSI Based on Taguchi Method


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Chemical mechanical polishing (CMP) has become an essential technique in advanced ULSI process. The mechanism of Ta CMP is discussed in this paper. According to the physical and chemical properties of Ta, the alkaline polishing slurry and proper process parameters for Ta CMP are prepared. The paper optimized four key parameters-abrasive concentration, organic alkali, oxidant and surfactant concentration, obtained the comprehensive optimized slurry used in evaluating the removal rate using Taguchi method. The results indicate that: abrasive concentration is 10%, the organic alkali concentration is 15ml/L, the oxidant concentration is 10ml/L and the surfactant concentration is 10ml/L, higher removal rate can be obtained.



Advanced Materials Research (Volumes 129-131)

Edited by:

Xie Yi and Li Mi






H. L. Mu et al., "Study on Optimization of CMP Slurry for Tantalum in ULSI Based on Taguchi Method", Advanced Materials Research, Vols. 129-131, pp. 794-798, 2010

Online since:

August 2010




[1] Xing Zhe, Liu Yuling, Tan Baimei, etal: Study on the CMP slurry for tantalum barrier layer of copper multi-layer wiring in ULSI. Chinese Journal of Semiconductors. 12(2004), pp.1726-1729.

[2] Huang Bo: Solid Material and it's Applications. (Huanan Institute of Technology Publication, Guang Zhou 1994).

[3] Pang Enpei, LinJin, Wang Rongchang, etal: Research & Progress of SSE. 1: (2002), p.78.

[4] WANG Juan, LIU Yu-ling, ZHANG Jian-xin, SHU Xing-jun: Study of Ta CMP and Polishing Mechanism. Semiconductor Technology. 5 (2006), pp.361-366.

[5] Genichi Taguchi, Elsayed A. Elsayed, Thomas C. Hsiang: Quality Engineering in Production Systems. (McGraw-Hill, New York 1989).

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