Development of High-Temperature Acoustic Emission Sensor Using Aluminium Nitrade Thin Film

Abstract:

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Aluminum nitride (AlN) is a promising Acoustic Emission (AE) sensor element for high-temperature environments such as gas turbines and other plants because AlN maintains its piezoelectricity up to 1200°C. Highly c-axis-oriented AlN thin-film sensor elements were prepared on silicon single crystals by rf magnetron sputtering. Both ordinary-temperature AE sensors and high-temperature AE sensors have been developed using these elements. In this paper, to study effects of d33 and thickness of AlN elements on sensor sensitivity, AlN elements with d33 from 2 to 7 pm/V and thickness from 3 to 9 /m were prepared. It is confirmed that the AE sensor sensitivity increased with d33 and thickness of AlN elements. The sensitivity of the high-temperature AE sensor was also improved by a design of the sensor structure. The sensor characteristics were evaluated at elevated temperatures from 200 to 600°C. It was confirmed that the AE sensor works well at 600°C and does not deteriorate.

Info:

Periodical:

Advanced Materials Research (Volumes 13-14)

Edited by:

R. Pullin, K.M. Holford, S.L. Evans and J.M. Dulieu-Barton

Pages:

111-116

DOI:

10.4028/www.scientific.net/AMR.13-14.111

Citation:

H. Noma et al., "Development of High-Temperature Acoustic Emission Sensor Using Aluminium Nitrade Thin Film", Advanced Materials Research, Vols. 13-14, pp. 111-116, 2006

Online since:

February 2006

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$35.00

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