Cathodeluminescence Characterization of AlGaN Film Grown by MOCVD


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Recent achievements in III-nitride semiconductor structures growth have allowed ultraviolet (UV) photo-detectors based on these compounds to be well established today. In this article, AlGaN film of 1-μm thickness was grown on Al2O3 substrate by metal-organic chemical vapor deposition (MOCVD). The AFM was used to analyze the surface morphology of the AlGaN film; X-ray diffraction measurements were used to study the quality of the film’ crystal structure; Cathode-ray luminescence(CL) was employed to study the luminescence properties of the AlGaN film. The result shows that there is a single atom layer on the AlGaN film’surface, and it shows that a low-defect-density AlGaN film with good surface morphology and single crystal Hexagonal structure has been obtained. It is found that there is some relationship between the film’crystal structure , dislocations and the luminescence properties . PACS: 73.61.



Advanced Materials Research (Volumes 143-144)

Edited by:

H. Wang, B.J. Zhang, X.Z. Liu, D.Z. Luo, S.B. Zhong






L. J. Wang et al., "Cathodeluminescence Characterization of AlGaN Film Grown by MOCVD", Advanced Materials Research, Vols. 143-144, pp. 966-970, 2011

Online since:

October 2010




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