We have investigated the morphological changes with varying the substrate temperature in the range of 350-400°C, in synthesizing the indium oxide (In2O3) rod-like structures by using the metalorganic chemical vapor deposition method. The as-synthesized rod-like structures was aligned perpendicular to the Si substrate. X-ray diffraction (XRD) and selected area electron diffraction (SAED) analyses demonstrated that the rods had a cubic In2O3 structure. PL spectra of the In2O3 rod-like structures exhibited the visible light emission. We discussed the possible growth mechanisms.